High performance bilayer-graphene terahertz detectors

被引：169

作者：

Spirito, Davide ^{[1
,2
]}

Coquillat, Dominique ^{[3
,4
]}

De Bonis, Sergio L. ^{[1
,2
]}

Lombardo, Antonio ^{[5
]}

Bruna, Matteo ^{[5
]}

Ferrari, Andrea C. ^{[5
]}

Pellegrini, Vittorio ^{[1
,2
,6
]}

Tredicucci, Alessandro ^{[1
,2
]}

Knap, Wojciech ^{[3
,4
]}

Vitiello, Miriam S. ^{[1
,2
]}

机构：

[1] Ist Nanosci CNR, NEST, I-56127 Pisa, Italy

[2] Scuola Normale Super Pisa, I-56127 Pisa, Italy

[3] Univ Montpellier 2, Lab Charles Coulomb UMR 5221, F-34095 Montpellier, France

[4] CNRS, F-34095 Montpellier, France

[5] Univ Cambridge, Cambridge Graphene Ctr, Cambridge CB3 0FA, England

[6] Ist Italiano Tecnol, Graphene Labs, I-16163 Genoa, Italy

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 06期

基金：

英国工程与自然科学研究理事会;

关键词：

FIELD-EFFECT TRANSISTORS; SPECTROSCOPY; CRYSTALS; LASER;

D O I：

10.1063/1.4864082

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report bilayer-graphene field effect transistors operating as Terahertz (THz) broadband photodetectors based on plasma-waves excitation. By employing wide-gate geometries or buried gate configurations, we achieve a responsivity similar to 1.2 V/W (1.3 mA/W) and a noise equivalent power similar to 2 x 10(-9) W/root Hz in the 0.29-0.38 THz range, in photovoltage and photocurrent mode. The potential of this technology for scalability to higher frequencies and the development of flexible devices makes our approach competitive for a future generation of THz detection systems. (C) 2014 AIP Publishing LLC.

引用

页数：5

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