AlGaN/GaN HEMT based hydrogen sensor with platinum nanonetwork gate electrode

被引：38

作者：

Kim, Hyonwoong ^{[1
]}

Jang, Soohwan ^{[1
]}

机构：

[1] Dankook Univ, Dept Chem Engn, Yongin 448701, South Korea

来源：

CURRENT APPLIED PHYSICS | 2013年 / 13卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

Platinum; Nanonetwork; Hydrogen; Sensing; GaN; MOBILITY TRANSISTOR; DIODE; GAN; MECHANISMS; NANOWIRES;

D O I：

10.1016/j.cap.2013.07.008

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

AlGaN/GaN high electron mobility transistor (HEMT) based hydrogen sensors incorporating platinum nanonetworks in the gate region were demonstrated. Pt nanonetworks with 2-3 nm diameter were synthesized by a simple and low-cost solution phase method, and applied to the gate electrode of transistor sensor. The HEMT with physically and electrically connected Pt nanonetwork gate showed good pinch-off and modulation of drain current characteristics. Compared to conventional Pt thin film AlGaN/GaN HEMT sensor, the Pt nanonetwork sensor has dramatically improved current response to hydrogen. Relative current change of Pt nanonetwork gated sensor in 500 ppm H-2 balanced with Air ambient was 3.3 x 10(6)% at V-GS of -3.3 V, while 2.5 x 10(2)% at V-GS of -2.9 V for Pt film. This results from large increase in channel conductance induced by huge catalytic surface area of nanostructured Pt networks. (C) 2013 Elsevier B. V. All rights reserved.

引用

页码：1746 / 1750

页数：5

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