AlGaN/GaN HEMT based hydrogen sensor with platinum nanonetwork gate electrode

被引:38
作者
Kim, Hyonwoong [1 ]
Jang, Soohwan [1 ]
机构
[1] Dankook Univ, Dept Chem Engn, Yongin 448701, South Korea
基金
新加坡国家研究基金会;
关键词
Platinum; Nanonetwork; Hydrogen; Sensing; GaN; MOBILITY TRANSISTOR; DIODE; GAN; MECHANISMS; NANOWIRES;
D O I
10.1016/j.cap.2013.07.008
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
AlGaN/GaN high electron mobility transistor (HEMT) based hydrogen sensors incorporating platinum nanonetworks in the gate region were demonstrated. Pt nanonetworks with 2-3 nm diameter were synthesized by a simple and low-cost solution phase method, and applied to the gate electrode of transistor sensor. The HEMT with physically and electrically connected Pt nanonetwork gate showed good pinch-off and modulation of drain current characteristics. Compared to conventional Pt thin film AlGaN/GaN HEMT sensor, the Pt nanonetwork sensor has dramatically improved current response to hydrogen. Relative current change of Pt nanonetwork gated sensor in 500 ppm H-2 balanced with Air ambient was 3.3 x 10(6)% at V-GS of -3.3 V, while 2.5 x 10(2)% at V-GS of -2.9 V for Pt film. This results from large increase in channel conductance induced by huge catalytic surface area of nanostructured Pt networks. (C) 2013 Elsevier B. V. All rights reserved.
引用
收藏
页码:1746 / 1750
页数:5
相关论文
共 23 条
[1]   Spontaneous ignition of hydrogen leaks: A review of postulated mechanisms [J].
Astbury, G. R. ;
Hawksworth, S. J. .
INTERNATIONAL JOURNAL OF HYDROGEN ENERGY, 2007, 32 (13) :2178-2185
[2]   Electrical transport properties of single GaN and InN nanowires [J].
Chang, CY ;
Chi, GC ;
Wang, WM ;
Chen, LC ;
Chen, KH ;
Ren, F ;
Pearton, SJ .
JOURNAL OF ELECTRONIC MATERIALS, 2006, 35 (04) :738-743
[3]   Principles and mechanisms of gas sensing by GaN nanowires functionalized with gold nanoparticles [J].
Dobrokhotov, Vladimir ;
McIlroy, D. N. ;
Norton, M. Grant ;
Abuzir, A. ;
Yeh, W. J. ;
Stevenson, Ian ;
Pouy, R. ;
Bochenek, J. ;
Cartwright, M. ;
Wang, Lidong ;
Dawson, J. ;
Beaux, Miles ;
Berven, Chris .
JOURNAL OF APPLIED PHYSICS, 2006, 99 (10)
[4]  
Eickhoff M, 2003, GROUP III-NITRIDES AND THEIR HETEROSTRUCTURES: GROWTH, CHARACTERIZATION AND APPLICATIONS, P1908, DOI 10.1002/pssc.200303139
[5]  
Gao TR, 2002, CHINESE PHYS, V11, P1307, DOI 10.1088/1009-1963/11/12/317
[6]   Activity benchmarks and requirements for Pt, Pt-alloy, and non-Pt oxygen reduction catalysts for PEMFCs [J].
Gasteiger, HA ;
Kocha, SS ;
Sompalli, B ;
Wagner, FT .
APPLIED CATALYSIS B-ENVIRONMENTAL, 2005, 56 (1-2) :9-35
[7]   Hydrogen sensing characteristics and mechanism of Pd/AlGaN/GaN Schottky diodes subjected to oxygen gettering [J].
Hasegawaa, Hideki ;
Akazawa, Masamichi .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2007, 25 (04) :1495-1503
[8]   On the hydrogen sensing characteristics of a Pd/AlGaN/GaN heterostructure field-effect transistor (HFET) [J].
Hsu, Chi-Shiang ;
Chen, Huey-Ing ;
Chang, Chung-Fu ;
Chen, Tai-You ;
Huang, Chien-Chang ;
Chou, Po-Cheng ;
Liu, Wen-Chau .
SENSORS AND ACTUATORS B-CHEMICAL, 2012, 165 (01) :19-23
[9]   SnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications [J].
Hung, Shao-Tsu ;
Chang, Chi-Jung ;
Hsu, Chien-Hsing ;
Chu, Byung Hwan ;
Lo, Chien Fong ;
Hsu, Chin-Ching ;
Pearton, Stephen J. ;
Holzworth, Monta Raymond ;
Whiting, Patrick Guzek ;
Rudawski, Nicholas Guy ;
Jones, Kevin S. ;
Dabiran, Amir ;
Chow, Peter ;
Ren, Fan .
INTERNATIONAL JOURNAL OF HYDROGEN ENERGY, 2012, 37 (18) :13783-13788
[10]   Highly sensitive AlGaN/GaN diode-based hydrogen sensors using platinum nanonetworks [J].
Kim, Hyonwoong ;
Lim, Wantae ;
Lee, Jae-Hoon ;
Pearton, S. J. ;
Ren, F. ;
Jang, Soohwan .
SENSORS AND ACTUATORS B-CHEMICAL, 2012, 164 (01) :64-68