Results of the 2015 testbeam of a 180nm AMS High-Voltage CMOS sensor prototype

被引:6
作者
Benoit, M. [1 ]
de Mendizabal, J. Bilbao [1 ]
Casse, G. [2 ]
Chen, H. [3 ]
Chen, K. [3 ]
Di Bello, F. A. [1 ]
Ferrere, D. [1 ]
Golling, T. [1 ]
Gonzalez-Sevilla, S. [1 ]
Iacobucci, G. [1 ]
Lanni, F. [3 ]
Liu, H. [3 ,4 ]
Meloni, F. [5 ,6 ]
Meng, L. [1 ,2 ]
Miucci, A. [1 ,5 ,6 ]
Muenstermann, D. [1 ,9 ]
Nessi, M. [1 ,7 ]
Peric, I. [8 ]
Rimoldi, M. [5 ,6 ]
Ristic, B. [1 ,7 ]
Pinto, M. Vicente Barrero [1 ]
Vossebeld, J. [2 ]
Weber, M. [5 ,6 ]
Wu, W. [3 ]
Xu, L. [3 ]
机构
[1] Univ Geneva, DPNC, 24 Quai Ernest Ansermet, CH-1211 Geneva 4, Switzerland
[2] Univ Liverpool, Dept Phys, Oliver Lodge Lab, Liverpool L69 7ZE, Merseyside, England
[3] Brookhaven Natl Lab, POB 5000, Upton, NY 11973 USA
[4] Univ Sci & Technol China, Dept Modern Phys, Hefei 230026, Anhui, Peoples R China
[5] Univ Bern, Albert Einstein Ctr Fundamental Phys, Sidlerstr 5, CH-3012 Bern, Switzerland
[6] Univ Bern, High Energy Phys Lab, Sidlerstr 5, CH-3012 Bern, Switzerland
[7] CERN, European Org Nucl Res, 385 Route Meyrin, CH-1217 Meyrin, Switzerland
[8] Karlsruhe Inst Technol, Kaiserstr 12, D-76131 Karlsruhe, Germany
[9] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England
基金
瑞士国家科学基金会;
关键词
Electronic detector readout concepts (solid-state); Particle tracking detectors (Solid-state detectors); Si microstrip and pad detectors; Solid state detectors;
D O I
10.1088/1748-0221/11/07/P07019
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. Results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.
引用
收藏
页数:15
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