Mechanism of the effect of electron beam melting on the distribution of oxygen, nitrogen and carbon in silicon

被引：0

作者：

Asghar, H. M. Noor ul Huda Khan ^{[1
,2
,3
]}

Shifa, Muhammad Shahzad ^{[4
]}

Gilani, Zaheer Abbas ^{[3
]}

Ali, Adnan ^{[4
]}

Mahmood, Khalid ^{[4
]}

Rehman, Jalil Ur ^{[3
]}

Usmani, Muhammad Nuaman ^{[5
]}

Wang, Peng ^{[1
,2
]}

Shi, Shiqiang Qin Shuang ^{[1
,2
]}

Jiang, Dachuan ^{[1
,2
]}

Tan, Yi ^{[1
,2
]}

机构：

[1] Dalian Univ Technol, Sch Mat Sci & Engn, Dalian, Peoples R China

[2] Key Lab Solar Energy Photovolta Syst Liaoning Pro, Dalian, Peoples R China

[3] Balochistan Univ Informat Technol Engn & Manageme, Dept Phys, Quetta, Pakistan

[4] Govt Coll Univ, Dept Phys, Faisalabad, Pakistan

[5] Bahudin Zakria Univ, Dept Phys, Multan, Pakistan

来源：

INTERNATIONAL JOURNAL OF MATERIALS RESEARCH | 2019年 / 110卷 / 05期

关键词：

Electron beam melting; Silicon; Carbon; Redistribution; SiC; METALLURGICAL-GRADE SILICON; SOLAR; PURIFICATION; REMOVAL;

D O I：

10.3139/146.111736

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

Electron beam melting was utilized to investigate the behavior of carbon flow by melting 100 g of multi-crystalline silicon in an electron beam furnace for five minutes. Carbon and nitrogen are the constituent impurities in contaminated Si samples with an average weight of 13% and 9%, respectively. The electron beam melting experiment caused redistribution of the impurities along the periphery and bottom of the Si sample with a pie-shaped structure. Investigations through scanning electron microscopy and energy dispersive X-ray spectroscopy confirmed that the impurities were silicon nitride and silicon carbide. It was determined that Si3N4 has a rod-shaped microstructure, whereas SiC has a granular morphology. By segregating the impurities redistributed through this technique, pure Si was obtained in the remaining sample.

引用

页码：476 / 480

页数：5

共 13 条

[1] Characterization of InGaN by Means of I-V Measurements of Respective Light-Emitting Diode (LED) by DLTS [J].