Heavy ion projection beam system for material modification at high ion energy

被引:2
作者
Weidenmüller, U
Meijer, J
Stephan, A
Bukow, HH
Sossna, E
Volland, B
Rangelow, IW
机构
[1] Ruhr Univ Bochum, D-44780 Bochum, Germany
[2] Univ Gesamthsch Kassel, D-34132 Kassel, Germany
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2002年 / 20卷 / 01期
关键词
D O I
10.1116/1.1434975
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Ion projection techniques have shown promising prospects to applications in direct high energy, high dose, and high quality material modification. The major advantages are a parallel processing for short implantation times and a mask separated from the target, which allows for implantation with high resolution and high quality even under extreme conditions. A system for high beam power has been developed. The key issues of our high energy ion projection system are the single solenoid tens with low imaging aberrations and the stencil mask which has to provide the necessary high resolution features and to withstand a beam power up to 100 W/cm(2). A high aspect ratio stencil mask is used for this purpose. The system has a demagnification factor of 16-22 and showed a resolution of 300 nm so far which is close to the physical limit for MeV ions from lateral straggling in the target. The setup, the mask, and some applications are presented. (C) 2002 American Vacuum Society.
引用
收藏
页码:246 / 249
页数:4
相关论文
共 6 条
  • [1] High energy implantation by ion projection
    Meijer, J
    Stephan, A
    [J]. MICROELECTRONIC ENGINEERING, 1998, 42 : 257 - 260
  • [2] A review of ion projection lithography
    Melngailis, J
    Mondelli, AA
    Berry, IL
    Mohondro, R
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (03): : 927 - 957
  • [3] RANGELOW IW, J VAC SCI TECHNOL B
  • [4] Dry etching with gas chopping without rippled sidewalls
    Volland, B
    Hudek, FS
    Heerlein, H
    Rangelow, IW
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (06): : 2768 - 2771
  • [5] Synthesis of silicide structures by high energy ion projection
    Weidenmüller, U
    Meijer, J
    Baving, P
    Röcken, H
    Bukow, HH
    Rolfs, C
    [J]. MICROELECTRONIC ENGINEERING, 2000, 53 (1-4) : 385 - 388
  • [6] Stencil masks for high energy ion projection
    Weidenmüller, U
    Meijer, J
    Stephan, A
    Bukow, HH
    Rolfs, C
    [J]. MICROELECTRONIC ENGINEERING, 1999, 46 (1-4) : 489 - 492