Off-state leakage current of nano-scaled MOSFETs with high-k gate dielectric

被引：0

作者：

Liu, Hong-Xia ^{[1
]}

Ma, Fei ^{[1
]}

Fan, Ji-Bin ^{[1
]}

Fan, Xiao-Jiao ^{[1
]}

Fei, Chen-Xi ^{[1
]}

Luo, Yi ^{[2
]}

Liu, Chen ^{[2
]}

机构：

[1] Xidian Univ, Sch Microelect, Minist Educ Wide Band Gap Semicond Mat & Devices, Key Lab, Xian 710071, Peoples R China

[2] Xian Sempower Elect Technol Co, Xian 710071, Peoples R China

来源：

2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012) | 2012年

基金：

中国国家自然科学基金;

关键词：

STACK TECHNOLOGY;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The off-state leakage current characteristics of nano-scaled MOSFETs with high-k gate dielectric are thoroughly investigated. The off-state leakage current can be divided into three components and the influences of fringing induced barrier lowering (FIBL) effect and drain induced barrier lowering (DIBL) effect on each component are also investigated. For nano-scaled devices with high-k gates, the source leakage current becomes the major component of the off-state leakage current. The influences of structure parameters on the off-state leakage current are studied. The off-state performance of the devices with high-k gate dielectric can be improved by optimizing the device structure parameters.

引用

页码：93 / 96

页数：4

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