Grain Boundary Structures and Electronic Properties of Hexagonal Boron Nitride on Cu(111)

被引:112
作者
Li, Qiucheng [1 ]
Zou, Xiaolong [2 ,3 ,4 ]
Liu, Mengxi [1 ]
Sun, Jingyu [1 ]
Gao, Yabo [1 ]
Qi, Yue [1 ]
Zhou, Xiebo [1 ,5 ]
Yakobson, Boris I. [2 ,3 ,4 ]
Zhang, Yanfeng [1 ,5 ]
Liu, Zhongfan [1 ]
机构
[1] Peking Univ, Acad Adv Interdisciplinary Studies, Beijing Sci & Engn Ctr Nanocarbons, Ctr Nanochem CNC,Beijing Natl Lab Mol Sci,Coll Ch, Beijing 100871, Peoples R China
[2] Rice Univ, Dept Mat Sci & NanoEngn, Houston, TX 77005 USA
[3] Rice Univ, Dept Chem, Houston, TX 77005 USA
[4] Rice Univ, Smalley Inst Nanoscale Sci & Technol, Houston, TX 77005 USA
[5] Peking Univ, Dept Mat Sci & Engn, Coll Engn, Beijing 100871, Peoples R China
基金
中国国家自然科学基金;
关键词
Boron nitride; chemical vapor deposition; STM/STS; grain boundary; electronic properties; CHEMICAL-VAPOR-DEPOSITION; SCANNING-TUNNELING-MICROSCOPY; TOTAL-ENERGY CALCULATIONS; AUGMENTED-WAVE METHOD; POLYCRYSTALLINE GRAPHENE; MOLYBDENUM-DISULFIDE; CARBON NANOTUBES; HIGH-QUALITY; BASIS-SET; MONOLAYER;
D O I
10.1021/acs.nanolett.5b01852
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Grain boundaries (GBs) of hexagonal boron nitride (h-BN) grown on Cu(111) were investigated by scanning tunneling microscopy/spectroscopy (STM/STS). The first experimental evidence of the GBs composed of square-octagon pairs (4 vertical bar 8 GBs) was given, together with those containing pentagon-heptagon pairs (5 vertical bar 7 GBs). Two types of GBs were found to exhibit significantly different electronic properties, where the band gap of the 5 vertical bar 7 GB was dramatically decreased as compared with that of the 4 vertical bar 8 GB, consistent with our obtained result from density functional theory (DFT) calculations. Moreover, the present work may provide a possibility of tuning the inert electronic property of h-BN via grain boundary engineering.
引用
收藏
页码:5804 / 5810
页数:7
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