III-Nitride-Based Quantum Dots and Their Optoelectronic Applications

被引：22
作者：
Weng, G. E. [1 ,2 ]
Ling, A. K. [1 ]
Lv, X. Q. [2 ]
Zhang, J. Y. [1 ]
Zhang, B. P. [1 ,2 ]
机构：
[1] Xiamen Univ, Dept Phys, Lab Micronano Optoelect, Xiamen 361005, Peoples R China
[2] Xiamen Univ, MEMS Res Ctr, Xiamen 361005, Peoples R China
来源：
NANO-MICRO LETTERS | 2011年 / 3卷 / 03期
关键词：
III-nitride-based quantum dots; Lasers; Light-emitting diods; Infrared photodetectors; Solar cells; LIGHT-EMITTING-DIODES; HIGH-TEMPERATURE OPERATION; INFRARED PHOTODETECTOR; MOLECULAR-BEAM; EXCITON LOCALIZATION; OPTICAL GAIN; WELL LASER; GAN; GROWTH; BLUE;
D O I：
10.1007/BF03353673
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
During the last two decades, III-nitride-based quantum dots (QDs) have attracted great attentions for optoelectronic applications due to their unique electronic properties. In this paper, we first present an overview on the techniques of fabrication for III-nitride-based QDs. Then various optoelectronic devices such as QD lasers, QD light-emitting diodes (LEDs), QD infrared photodetectors (QDIPs) and QD intermediate band (QDIB) solar cells (SCs) are discussed. Finally, we focus on the future research directions and how the challenges can be overcome.
引用
收藏
页码：200 / 207
页数：8
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