AlGaN/GaN high electron mobility transistors with inclined-gate-recess structure

被引：2

作者：

Aoi, Yuma ^{[1
]}

Ohno, Yutaka

Kishimoto, Shigeru

Maezawa, Koichi

Mizutani, Takashi

机构：

[1] Nagoya Univ, Dept Quantum Engn, Grad Sch Engn, Nagoya, Aichi 4648603, Japan

[2] Nagoya Univ, Inst Adv Res, Nagoya, Aichi 4648601, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 4B期

关键词：

AlGaN/GaN HEMTs; inclined-gate-recess; electric field; electron velocity; current gain cutoff frequency;

D O I：

10.1143/JJAP.45.3368

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied an inclined-gate-recess structure in order to clarify the effect of increasing the electric field in the channel. Two-dimensional device simulation has revealed that the electric field and the electron velocity in the channel have increased by the inclined-gate-recess structure, which leads to an improvement of g(m). AlGaN/GaN high electron mobility transistors (HEMTs) with inclined-gate-recess have been fabricated. Improved g(m) and f(T) have been obtained, which confirms the importance of increasing the electric field in the channel.

引用

页码：3368 / 3371

页数：4

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