Effect of morphology evolution on the thermoelectric properties of oxidized ZnO thin films

被引:29
作者
Liu, Shiying [1 ,2 ]
Li, Guojian [1 ]
Xiao, Lin [1 ,2 ]
Jia, Baohai [1 ]
Gao, Yang [1 ,2 ]
Wang, Qiang [1 ]
机构
[1] Northeastern Univ, Minist Educ, Key Lab Electromagnet Proc Mat, Shenyang 110819, Liaoning, Peoples R China
[2] Northeastern Univ, Sch Mat Sci & Engn, Shenyang 110819, Liaoning, Peoples R China
基金
中国国家自然科学基金;
关键词
Thin film; Thermoelectric material; ZnO; Surface morphology; Thermal oxidation; HIGH MAGNETIC-FIELD; SILICON NANOWIRES; DOPED ZNO; OPTICAL-PROPERTIES; BAND-GAP; GROWTH;
D O I
10.1016/j.apsusc.2017.12.053
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The effects of nanowire content on the thermoelectric properties of ZnO films were investigated. The nanowire content of ZnO films was tuned by thermal oxidation of evaporated Zn films. The results showed that hexagonal and polyhedral morphologies on the surface of Zn films can be used to tune the nanowire content of ZnO films. Hexagonal nanoplates with a diameter of 100-350 nm readily grew ZnO nanowires with c-axis preferential orientation. Conversely, it was difficult to grow nanowires on polyhedral nanoparticles with diameters of 500-750 nm because the meeting of ZnO (101) and (001) facets suppressed nanowire growth. Thermoelectric parameters were strongly affected by nanowire content. In particular, carrier concentration increased with nanowire content. Carrier mobility also increased with nanowire content because the nanowires behaved as channels for electronic migration. The band gap of the films narrowed with increasing nanowire content because the binding energy of O 1s electrons with oxygen vacancies decreased. The maximum power factor of the film with high nanowire content (8.80 mu W/m K-2 at 530 K) was approximately 300% higher than that of the film with low nanowire content. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:354 / 361
页数:8
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