Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation

被引：91

作者：

Nakamura, S

Senoh, M

Nagahama, S

Iwasa, N

Yamada, T

Matsushita, T

Sugimoto, Y

Kiyoku, H

机构：

[1] Dept. of Research and Development, Nichia Chemical Industries, Ltd., Kaminaka, Anan

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 20期

关键词：

D O I：

10.1063/1.118973

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The emission spectra of InGaN multi-quantum-well (MQW) laser diodes (LDs) under continuous-wave (CW) operation at room temperature (RT) showed periodic subband emissions with an energy separation of 2 meV. The peak wavelength of the laser emission was measured as a function of the operating current. The peak wavelength showed mode hopping toward higher energy with increasing operating current. Each single-mode laser omission was located at a peak of each periodic subband emission. These periodic subband emissions probably result from the transitions between the subband energy levels of the InGaN quantum dots formed from In-rich regions in the InGaN well layers. High-power InGaN MQW LDs with an output power of 40 mW were performed under RT CW operation. (C) 1997 American Institute of Physics.

引用

页码：2753 / 2755

页数：3

共 18 条

[11] HIGH-QUALITY INGAN FILMS GROWN ON GAN FILMS [J].

NAKAMURA, S ;

MUKAI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (10B) :L1457-L1459

[12] InGaN-based multi-quantum-well-structure laser diodes [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Kiyoku, H ;

Sugimoto, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (1B) :L74-L76

[13] Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Sugimoto, Y ;

Kiyoku, H .

APPLIED PHYSICS LETTERS, 1997, 70 (11) :1417-1419

[14] INSITU MONITORING OF GAN GROWTH USING INTERFERENCE EFFECTS [J].

NAKAMURA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (08) :1620-1627

[15] Ridge-geometry InGaN multi-quantum-well-structure laser diodes [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Sugimoto, Y ;

Kiyoku, H .

APPLIED PHYSICS LETTERS, 1996, 69 (10) :1477-1479

[16] SUPERBRIGHT GREEN INGAN SINGLE-QUANTUM-WELL-STRUCTURE LIGHT-EMITTING-DIODES [J].

NAKAMURA, S ;

SENOH, M ;

IWASA, N ;

NAGAHAMA, S ;

YAMADA, T ;

MUKAI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (10B) :L1332-L1335

[17] Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm [J].

Narukawa, Y ;

Kawakami, Y ;

Funato, M ;

Fujita, S ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 1997, 70 (08) :981-983

[18] Recombination dynamics of localized excitons in In0.20Ga0.80N-In0.05Ga0.95 multiple quantum wells [J].

Narukawa, Y ;

Kawakami, Y ;

Fujita, S ;

Nakamura, S .

PHYSICAL REVIEW B, 1997, 55 (04) :R1938-R1941

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