Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation

被引：91

作者：

Nakamura, S

Senoh, M

Nagahama, S

Iwasa, N

Yamada, T

Matsushita, T

Sugimoto, Y

Kiyoku, H

机构：

[1] Dept. of Research and Development, Nichia Chemical Industries, Ltd., Kaminaka, Anan

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 20期

关键词：

D O I：

10.1063/1.118973

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The emission spectra of InGaN multi-quantum-well (MQW) laser diodes (LDs) under continuous-wave (CW) operation at room temperature (RT) showed periodic subband emissions with an energy separation of 2 meV. The peak wavelength of the laser emission was measured as a function of the operating current. The peak wavelength showed mode hopping toward higher energy with increasing operating current. Each single-mode laser omission was located at a peak of each periodic subband emission. These periodic subband emissions probably result from the transitions between the subband energy levels of the InGaN quantum dots formed from In-rich regions in the InGaN well layers. High-power InGaN MQW LDs with an output power of 40 mW were performed under RT CW operation. (C) 1997 American Institute of Physics.

引用

收藏

页码：2753 / 2755

页数：3

相关论文

共 18 条

[1] P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI) [J].

AMANO, H ;

KITO, M ;

HIRAMATSU, K ;

AKASAKI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12) :L2112-L2114

[2] Spontaneous emission of localized excitons in InGaN single and multiquantum well structures [J].

Chichibu, S ;

Azuhata, T ;

Sota, T ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 1996, 69 (27) :4188-4190

[3] Room temperature pulsed operation of nitride based multi-quantum-well laser diodes with cleaved facets on conventional C-face sapphire substrates [J].

Itaya, K ;

Onomura, M ;

Nishio, J ;

Sugiura, L ;

Saito, S ;

Suzuki, M ;

Rennie, J ;

Nunoue, SY ;

Yamamoto, M ;

Fujimoto, H ;

Kokubun, Y ;

Ohba, Y ;

Hatakoshi, G ;

Ishikawa, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (10B) :L1315-L1317

[4] SCHOTTKY-BARRIER PHOTODETECTOR BASED ON MG-DOPED P-TYPE GAN FILMS [J].

KHAN, MA ;

KUZNIA, JN ;

OLSON, DT ;

BLASINGAME, M ;

BHATTARAI, AR .

APPLIED PHYSICS LETTERS, 1993, 63 (18) :2455-2456

[5] LARGE-BAND-GAP SIC, III-V NITRIDE, AND II-VI ZNSE-BASED SEMICONDUCTOR-DEVICE TECHNOLOGIES [J].

MORKOC, H ;

STRITE, S ;

GAO, GB ;

LIN, ME ;

SVERDLOV, B ;

BURNS, M .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (03) :1363-1398

[6] Characteristics of InGaN multi-quantum-well-structure laser diodes [J].

Nakamura, S ;

Senoh, M ;

Nagahama, SI ;

Iwasa, N ;

Yamada, T .

APPLIED PHYSICS LETTERS, 1996, 68 (23) :3269-3271

[7] InGaN multi-quantum-well structure laser diodes grown on MgAl2O4 substrates [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Kiyoku, H ;

Sugimoto, Y .

APPLIED PHYSICS LETTERS, 1996, 68 (15) :2105-2107

[8] InGaN multi-quantum-well-structure laser diodes with cleaved mirror cavity facets [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Kiyoku, H ;

Sugimoto, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (2B) :L217-L220

[9] Optical gain and carrier lifetime of InGaN multi-quantum well structure laser diodes [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Sugimoto, Y ;

Kiyoku, H .

APPLIED PHYSICS LETTERS, 1996, 69 (11) :1568-1570

[10]

Nakamura S, 1997, MRS INTERNET J N S R, V2