Interfacial dead layer effects on current-voltage characteristics in asymmetric ferroelectric tunnel junctions

被引:9
作者
Sun, Ping [1 ,2 ,3 ]
Wu, Yin-Zhong [1 ,2 ]
Zhu, Su-Hua [1 ,2 ]
Cai, Tian-Yi [3 ]
Ju, Sheng [3 ]
机构
[1] Changshu Inst Technol, Jiangsu Lab Adv Funct Mat, Changshu 215500, Peoples R China
[2] Changshu Inst Technol, Dept Phys, Changshu 215500, Peoples R China
[3] Soochow Univ, Sch Phys Sci & Technol, Suzhou 215006, Peoples R China
关键词
D O I
10.1063/1.4803151
中图分类号
O59 [应用物理学];
学科分类号
摘要
Current-voltage characteristics and P-E loops are simulated in SrRuO3/BaTiO3/Pt tunneling junctions with interfacial dead layer. The unswitchable interfacial polarization is coupled with the screen charge and the barrier polarization self-consistently within the Thomas-Fermi model and the Landau-Devonshire theory. The shift of P-E loop from the center position and the unequal values of the positive coercive field and the negative coercive field are found, which are induced by the asymmetricity of interface dipoles. A complete J-V curve of the junction is shown for different barrier thicknesses, and the effect of the magnitude of interfacial polarization on the tunneling current is also investigated. (C) 2013 AIP Publishing LLC.
引用
收藏
页数:5
相关论文
共 19 条
[1]   Density functional study of PbTiO3 nanocapacitors with Pt and Au electrodes [J].
Al-Saidi, W. A. ;
Rappe, Andrew M. .
PHYSICAL REVIEW B, 2010, 82 (15)
[2]  
Ashcroft N.W., 1976, Solid State Physics, P340
[3]   Interface effect on ferroelectricity at the nanoscale [J].
Duan, CG ;
Sabirianov, RF ;
Mei, WN ;
Jaswal, SS ;
Tsymbal, EY .
NANO LETTERS, 2006, 6 (03) :483-487
[4]   Giant tunnel electroresistance for non-destructive readout of ferroelectric states [J].
Garcia, V. ;
Fusil, S. ;
Bouzehouane, K. ;
Enouz-Vedrenne, S. ;
Mathur, N. D. ;
Barthelemy, A. ;
Bibes, M. .
NATURE, 2009, 460 (7251) :81-84
[5]   Ionic polarizability of conductive metal oxides and critical thickness for ferroelectricity in BaTiO3 [J].
Gerra, G ;
Tagantsev, AK ;
Setter, N ;
Parlinski, K .
PHYSICAL REVIEW LETTERS, 2006, 96 (10)
[6]   The internal electric field originating from the mismatch effect and its influence on ferroelectric thin film properties [J].
Glinchuk, MD ;
Morozovska, AN .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (21) :3517-3531
[7]   Tunneling Electroresistance Effect in Ferroelectric Tunnel Junctions at the Nanoscale [J].
Gruverman, A. ;
Wu, D. ;
Lu, H. ;
Wang, Y. ;
Jang, H. W. ;
Folkman, C. M. ;
Zhuravlev, M. Ye. ;
Felker, D. ;
Rzchowski, M. ;
Eom, C. -B. ;
Tsymbal, E. Y. .
NANO LETTERS, 2009, 9 (10) :3539-3543
[8]   Polarization relaxation induced by a depolarization field in ultrathin ferroelectric BaTiO3 capacitors -: art. no. 237602 [J].
Kim, DJ ;
Jo, JY ;
Kim, YS ;
Chang, YJ ;
Lee, JS ;
Yoon, JG ;
Song, TK ;
Noh, TW .
PHYSICAL REVIEW LETTERS, 2005, 95 (23)
[9]   Interface dipole effect on thin film ferroelectric stability: First-principles and phenomenological modeling [J].
Liu, Xiaohui ;
Wang, Yong ;
Lukashev, Pavel V. ;
Burton, J. D. ;
Tsymbal, Evgeny Y. .
PHYSICAL REVIEW B, 2012, 85 (12)
[10]   Current-voltage characteristics and ON/OFF ratio in ferroelectric tunnel junctions [J].
Lu, Xiaoyan ;
Li, Hui ;
Cao, Wenwu .
JOURNAL OF APPLIED PHYSICS, 2012, 112 (05)