Interfacial dead layer effects on current-voltage characteristics in asymmetric ferroelectric tunnel junctions

被引：9

作者：

Sun, Ping ^{[1
,2
,3
]}

Wu, Yin-Zhong ^{[1
,2
]}

Zhu, Su-Hua ^{[1
,2
]}

Cai, Tian-Yi ^{[3
]}

Ju, Sheng ^{[3
]}

机构：

[1] Changshu Inst Technol, Jiangsu Lab Adv Funct Mat, Changshu 215500, Peoples R China

[2] Changshu Inst Technol, Dept Phys, Changshu 215500, Peoples R China

[3] Soochow Univ, Sch Phys Sci & Technol, Suzhou 215006, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 113卷 / 17期

关键词：

D O I：

10.1063/1.4803151

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Current-voltage characteristics and P-E loops are simulated in SrRuO3/BaTiO3/Pt tunneling junctions with interfacial dead layer. The unswitchable interfacial polarization is coupled with the screen charge and the barrier polarization self-consistently within the Thomas-Fermi model and the Landau-Devonshire theory. The shift of P-E loop from the center position and the unequal values of the positive coercive field and the negative coercive field are found, which are induced by the asymmetricity of interface dipoles. A complete J-V curve of the junction is shown for different barrier thicknesses, and the effect of the magnitude of interfacial polarization on the tunneling current is also investigated. (C) 2013 AIP Publishing LLC.

引用

页数：5

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