Increasing electrical conductivity in sputter-deposited Si/SiGe multilayers through electrical pulse based annealing

被引：1

作者：

Pichanusakorn, P. ^{[1
]}

Elsner, N. B. ^{[2
]}

Bandaru, P. R. ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Mech & Aerosp Engn, Mat Sci Program, La Jolla, CA 92093 USA

[2] Hi Z Technol Inc, San Diego, CA 92126 USA

来源：

ELECTRONICS LETTERS | 2008年 / 44卷 / 21期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1049/el:20081544

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low temperature deposition, by sputtering, on flexible/plastic substrates offers a relatively cheap alternative for fabricating single-/multilayer thin film devices. However, sputtering yields amorphous material, with low electrical conductivity, and requires subsequent annealing. Demonstrated is a new method of crystallisation, where controlled application of electrical pulses to sputter deposited Si/ Si0.8Ge0.2 multilayers is shown to decrease the electrical resistance by as much as 80%.

引用

页码：1274 / U60

页数：2