Photoluminescence of Porous Silicon Nanostructures with Optimum Current Density of Photo-Electrochemical Anodisation

被引：0

作者：

Zubaidah, M. Ain ^{[1
]}

Asli, N. A. ^{[1
]}

Rusop, M. ^{[2
]}

Abdullah, S. ^{[1
]}

机构：

[1] Univ Teknol MARA, Fac Sci Appl, Shah Alam 40450, Selangor, Malaysia

[2] Univ Teknol MARA, Fac Elect Engn, Shah Alam 40450, Selangor, Malaysia

来源：

2012 10TH IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS (ICSE) | 2012年

关键词：

Photoluminescence; porous silicon nanostructures; ELECTROLUMINESCENCE; VOLTAGE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

P-type silicon wafer (< 100 > orientation; boron doping; 0.75 similar to 10 Omega cm(-1)) was used to prepare samples of porous silicon nanostructures. All the samples have been prepared by using photo-electrochemical anodization. A fixed etching time of 30 minutes and volume ratio of electrolyte, hydrofluoric acid 48% (HF48%) and absolute ethanol (C2H5OH), 1:1 were used for various current densities, J. There were sample A (J=10 mA/cm(2)), sample B (J=20 mA/cm(2)), sample C (J=30 mA/cm(2)), sample D (J=40 mA/cm(2)) and sample E (J=50 mA/cm(2)). Photoluminescence (PL) spectra were investigated. Sample B gives the maximum peak position of PL spectrum at similar to 675 nm.

引用

页码：94 / 96

页数：3

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