Structural and Spectroscopic Properties of a 2 Inch ZnO-on-Sapphire Epiwafer Grown by Using Molecular Beam Epitaxy

被引：2

作者：

Robin, I. C. ^{[1
]}

Tavares, C. ^{[1
]}

Rothman, J. ^{[1
]}

Feuillet, G. ^{[1
]}

El-Shaer, A. H. ^{[2
]}

Bakin, A. ^{[2
]}

Waag, A. ^{[2
]}

Dang, Le Si ^{[3
]}

机构：

[1] DOPT, Leti MINATEC, CEA Grenoble, F-38054 Grenoble 9, France

[2] Tech Univ Carolo Wilhelmina Braunschweig, Inst Semicond Technol, D-38106 Braunschweig, Germany

[3] CNRS, Inst Neel, F-38042 Grenoble, France

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2008年 / 53卷 / 05期

关键词：

ZnO; Molecular beam epitaxy; Time-resolved photoluminescence; Cathodoluminescence;

D O I：

10.3938/jkps.53.2877

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The structural and the spectroscopic properties of a 2-inch ZnO epilayer grown by using molecular beam epitaxy are investigated. A 500-nm-thick substrate was grown on c-sappire by using a MgO buffer. In spite of the high dislocation density in the epilayer, temperature-dependent photoluminescence measurements show only a small decrease in the luminescence intensity between 4 K and 300 K. Time-resolved photoluminescence measurements reveal a decay time independent of temperature. Cathodoluminescence presents an inhomogeneous emission on a micrometric scale: a stronger emission is measured in small nanometric areas. A tentative explanation of this behavior is proposed.

引用

页码：2877 / 2879

页数：3

共 6 条

[1] MBE growth of ZnO layers on sapphire employing hydrogen peroxide as an oxidant
Bakin, A
El-Shaer, A
Mofor, AC
Kreye, M
Waag, A
Bertram, F
Christen, J
Heuken, M
Stoimenos, J
[J]. JOURNAL OF CRYSTAL GROWTH, 2006, 287 (01) : 7 - 11
[2] Direct evidence for selective impurity incorporation at the crystal domain boundaries in epitaxial ZnO layers
Bertram, F
Forster, D
Christen, J
Oleynik, N
Dadgar, A
Krost, A
[J]. APPLIED PHYSICS LETTERS, 2004, 85 (11) : 1976 - 1978
[3] Shallow donors and acceptors in ZnO
Meyer, BK
Sann, J
Hofmann, DM
Neumann, C
Zenner, A
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (04) : S62 - S66
[4] Bound exciton and donor-acceptor pair recombinations in ZnO
Meyer, BK
Alves, H
Hofmann, DM
Kriegseis, W
Forster, D
Bertram, F
Christen, J
Hoffmann, A
Strassburg, M
Dworzak, M
Haboeck, U
Rodina, AV
[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2004, 241 (02): : 231 - 260
[5] Structural characterization of ZnO films grown by molecular beam epitaxy on sapphire with MgO buffer
Pecz, B.
El-Shaer, A.
Bakin, A.
Mofor, A. -C.
Waag, A.
Stoemenos, J.
[J]. JOURNAL OF APPLIED PHYSICS, 2006, 100 (10)
[6] Defects in semiconductors: Some fatal, some vital
Queisser, HJ
Haller, EE
[J]. SCIENCE, 1998, 281 (5379) : 945 - 950

← 1 →