Development of Na0.5CoO2Thick Film Prepared by Screen-Printing Process
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Tsuruta, Akihiro
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Natl Inst Adv Ind Sci & Technol, Moriyama Ku, Nagoya, Aichi 4638560, JapanNatl Inst Adv Ind Sci & Technol, Moriyama Ku, Nagoya, Aichi 4638560, Japan
Tsuruta, Akihiro
[1
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Tanaka, Miki
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Natl Inst Adv Ind Sci & Technol, Moriyama Ku, Nagoya, Aichi 4638560, JapanNatl Inst Adv Ind Sci & Technol, Moriyama Ku, Nagoya, Aichi 4638560, Japan
Tanaka, Miki
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]
Mikami, Masashi
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Natl Inst Adv Ind Sci & Technol, Moriyama Ku, Nagoya, Aichi 4638560, JapanNatl Inst Adv Ind Sci & Technol, Moriyama Ku, Nagoya, Aichi 4638560, Japan
Mikami, Masashi
[1
]
Kinemuchi, Yoshiaki
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Natl Inst Adv Ind Sci & Technol, Moriyama Ku, Nagoya, Aichi 4638560, JapanNatl Inst Adv Ind Sci & Technol, Moriyama Ku, Nagoya, Aichi 4638560, Japan
Kinemuchi, Yoshiaki
[1
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Masuda, Yoshitake
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Natl Inst Adv Ind Sci & Technol, Moriyama Ku, Nagoya, Aichi 4638560, JapanNatl Inst Adv Ind Sci & Technol, Moriyama Ku, Nagoya, Aichi 4638560, Japan
Masuda, Yoshitake
[1
]
Shin, Woosuck
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Natl Inst Adv Ind Sci & Technol, Moriyama Ku, Nagoya, Aichi 4638560, JapanNatl Inst Adv Ind Sci & Technol, Moriyama Ku, Nagoya, Aichi 4638560, Japan
Shin, Woosuck
[1
]
Terasaki, Ichiro
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Natl Inst Adv Ind Sci & Technol, Moriyama Ku, Nagoya, Aichi 4638560, Japan
Nagoya Univ, Dept Phys, Chikusa Ku, Nagoya, Aichi 4648602, JapanNatl Inst Adv Ind Sci & Technol, Moriyama Ku, Nagoya, Aichi 4638560, Japan
Terasaki, Ichiro
[1
,2
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[1] Natl Inst Adv Ind Sci & Technol, Moriyama Ku, Nagoya, Aichi 4638560, Japan
[2] Nagoya Univ, Dept Phys, Chikusa Ku, Nagoya, Aichi 4648602, Japan
The Na(0.5)Co(0.9)Cu(0.1)O(2)thick film with the same thermoelectric performance as a Na(0.5)CoO(2)bulk was formed on an alumina substrate by the screen-printing process. The power factor exceeded 0.3 mW/K(2)m, with the resistivity of 3.8 m omega cm and the thermopower of 108 mu V/K. The thick film without any cracks strongly adhered to the substrate. The high-quality thick film had been realized through the carefully designed and improved process, mixing NaCl to promote the anisotropic sintering of Na0.5Co0.9Cu0.1O2, inserting a CuO interlayer to adhere the film and substrate, and Co-Cu substituting Cu for Co to control the sintering temperature.