Dielectric properties of pulsed-laser deposited indium tin oxide thin films

被引：9

作者：

Giusti, G. ^{[1
]}

Bowen, J. ^{[2
]}

Ramasse, Q. ^{[3
]}

Rey, G. ^{[1
]}

Blackburn, E. ^{[4
]}

Tian, L. ^{[4
]}

Jones, I. P.

Abell, J. S.

机构：

[1] Minatec, Mat & Genie Phys Lab, F-38016 Grenoble, France

[2] Univ Birmingham, Sch Chem Engn, Birmingham B15 2TT, W Midlands, England

[3] STFC Daresbury Labs, SuperSTEM, Warrington WA4 4AD, Cheshire, England

[4] Univ Birmingham, Sch Phys & Astron, Birmingham B15 2TT, W Midlands, England

来源：

THIN SOLID FILMS | 2012年 / 524卷

关键词：

STEM-VEELS; Ellipsometry; ITO; Dielectric function; Pulsed-laser deposition; Microstructure; OPTICAL-PROPERTIES; SPECTROSCOPIC ELLIPSOMETRY; TRANSPARENT; MULTILAYER;

D O I：

10.1016/j.tsf.2012.09.053

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polycrystalline tin-doped indium oxide (ITO) thin films were prepared by Pulsed Laser Deposition with an ITO (In2O3-10 wt.% SnO2) ceramic target and deposited on transparent borosilicate glass substrates between room temperature (RT) and 400 degrees C. The RT grown specimen was structurally investigated by Transmission Electron Microscopy, Scanning Electron Microscopy, Atomic Force Microscopy and X-Ray Diffraction. It contained both amorphous and crystalline phases. The electro-optical properties of the RT-grown sample were almost similar to those of the samples grown at higher temperatures. Finally, Scanning Transmission Electron Microscopy-Valence Electron Energy Loss Spectroscopy was used to derive locally dielectric properties which were compared with ellipsometry measurements in the 1.5-5.5 eV range using a Tauc-Lorentz model. (C) 2012 Elsevier B. V. All rights reserved.

引用

页码：249 / 256

页数：8

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