Infrared photoconductivity in heavily nitrogen doped a-Si:H

被引：0

作者：

Shelton, David J. ^{[1
]}

Ginn, James. C. ^{[1
]}

Coffey, Kevin R. ^{[2
]}

Boreman, Glenn D. ^{[1
]}

机构：

[1] Univ Cent Florida, CREOL, Orlando, FL 32816 USA

[2] Univ Cent Florida, AMPAC, Orlando, FL 32816 USA

来源：

AMORPHOUS AND POLYCRYSTALLINE THIN FILM SILICON SCIENCE AND TECHNOLOGY - 2009, VOL 1153 | 2009年 / 1153卷

关键词：

HYDROGENATED AMORPHOUS-SILICON; FILMS; RECOMBINATION;

D O I：

10.1557/PROC-1153-A02-02

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High frequency steady-state photoconductivity in nitrogen doped hydrogenated amorphous silicon (a-Si:H-N) films has been demonstrated at infrared (IR) frequencies of 650 to 2000 cm(-1). This allows IR photoconductivity to be excited using a simple thermal source. In order to produce high frequency photoconductivity effects, the plasma frequency must be increased to the desired device operation frequency or higher as described by the Drude model. IR ellipsometry was used to measure the steady-state permittivity of the a-Si: H-N films as a function of pump illumination intensity. The largest permittivity change was found to be Delta epsilon(r) = 2 resulting from a photo-carrier concentration on the order of 10(22) cm(-3). IR photoconductivity is shown to be limited by the effective electron mobility.

引用

页数：6

共 9 条

[1] PHOTOCONDUCTIVITY AND DARK CONDUCTIVITY OF HYDROGENATED AMORPHOUS-SILICON [J].