Optically pumped Si-based edge-emitting GeSn laser

被引：0
|
作者：
Al-Kabi, Sattar [1 ]
Ghetmiri, Seyed Amir [1 ]
Margetis, Joe [2 ]
Pham, Thach [1 ,3 ]
Zhou, Yiyin [1 ]
Dou, Wei [1 ]
Du, Wei [1 ,4 ]
Mosleh, Aboozar [5 ]
Liu, Jifeng [6 ]
Sun, Greg [7 ]
Soref, Richard A. [7 ]
Tolle, John [2 ]
Li, Baohua [3 ]
Mortazavi, Mansour [4 ]
Naseem, Hameed A. [1 ]
Yu, Shui-Qing [1 ]
机构：
[1] Univ Arkansas, Dept Elect Engn, Fayetteville, AR 72701 USA
[2] ASM, 3440 East Univ Dr, Phoenix, AZ 85034 USA
[3] Arktonics LLC, 1339 S Pinnacle Dr, Fayetteville, AR 72701 USA
[4] Univ Arkansas Pine Bluff, Dept Chem & Phys, Pine Bluff, AR 71601 USA
[5] Arkansas Tech Univ, Dept Elect Engn, Russellville, AR 72801 USA
[6] Dartmouth Coll, Thayer Sch Engn, Hanover, NH 03755 USA
[7] Univ Massachusetts, Dept Engn, Boston, MA 02125 USA
来源：
2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2017年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present double heterostructure GeSn edge emitting laser. The structure was grown on a Si substrate using a commercial chemical vapor deposition with GeH4 and SnCl4. The lasing threshold of 68 KW/cm(2) at 10K and maximum laser operating temperature of 110 K was achieved.
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页数：2
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