Lattice relaxation in semipolar AlxGa1-xN grown on (1(1)over-bar02) AlN substrates

被引：1

作者：

Akaike, Ryota ^{[1
]}

Ichikawa, Shuhei ^{[1
,2
]}

Funato, Mitsuru ^{[1
]}

Kawakami, Yoichi ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan

[2] Osaka Univ, Div Mat & Mfg Sci, 2-2 Yamadaoka, Suita, Osaka 5650871, Japan

来源：

APPLIED PHYSICS EXPRESS | 2020年 / 13卷 / 06期

关键词：

relaxation; algan; semipolar; deep ultraviolet; 11(2)OVER-BAR2; ALGAN;

D O I：

10.35848/1882-0786/ab9183

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Semipolar AlxGa1-xN films (similar to 660 nm thick) are fabricated on (1 (1) over bar 02) (r-plane) AlN substrates. X-ray diffraction measurements suggest that the structural quality is relatively good although lattice relaxation occurs. The experimentally evaluated relaxation degrees are 0.90 and 0.72 along the [1 (1) over bar0 (1) over bar] and [11 (2) over bar0] directions, respectively. These values, which are much larger than those of c-plane AlxGa1-xN for a similar Al composition and thickness, are reproduced by a calculation. Dislocations due to lattice relaxation are confined to the vicinity of the AlxGa1-xN/AlN interface, suggesting a small effect on the optical properties of quantum wells fabricated on r-plane AlxGa1-xN/AlN templates. (c) 2020 The Japan Society of Applied Physics

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页数：4

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