Photoinduced high-quality ultrathin SiO2 film from hybrid nanosheet at room temperature

被引：37

作者：

Kim, Yeji ^{[1
]}

Zhao, Feng ^{[1
]}

Mitsuishi, Masaya ^{[1
]}

Watanabe, Akira ^{[1
]}

Miyashita, Tokuji ^{[1
]}

机构：

[1] Tohoku Univ, IMRAM, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2008年 / 130卷 / 36期

基金：

日本学术振兴会;

关键词：

D O I：

10.1021/ja803852w

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The paper describes a flexible approach to building up high-quality ultrathin SiO2 films under deep UV light irradiation at room temperature. The ultrathin hybrid nanosheet possessing polyoctahedral silsesquioxane (POSS) has been designed to prepare densely packed ultrathin POSS films by the Langmuir-Blodgett (LB) technique. The LB technique enables POSS to have a multilayered structure with nanoscale precision. The films- hardness and modulus changed considerably from 0.1 and 2.6 GPa to 1.7 and 32.2 GPa, respectively, after deep UV light irradiation. Subsequent FTIR measurements revealed that the organic components were removed completely and that the POSS cage structure turned to an Si-O-Si network structure. X-ray photon spectroscopy also confirmed high-quality SiO2 formation with no suboxides. Copyright © 2008 American Chemical Society.

引用

页码：11848 / 11849

页数：2

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