Extracting a General Distortion Contribution Model from Quasi-Static and Non-Quasi-Static Models

被引：0

作者：

Aikio, Janne P. ^{[1
]}

Rahkonen, Timo ^{[1
]}

Pedro, Jose Carlos ^{[2
]}

机构：

[1] Univ Oulu, Dept Elect Engn, Oulu 90014, Finland

[2] Univ Aveiro, DETI, Inst Telecomunicacoes, P-3800 Aveiro, Portugal

来源：

2014 9TH EUROPEAN MICROWAVE INTEGRATED CIRCUIT CONFERENCE (EUMIC) | 2014年

关键词：

Distortion contribution analysis; Volterra analysis; polynomial device model; transit delays; Non-Quasi-Static modelling;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we propose a general transistor equivalent model structure especially suited for calculating distortion contributions in a nonlinear circuit. All device-internal nonlinearities are reduced into four polynomial nonlinear sources in the input and output ports of the transistor, resulting in a nonlinear generalization of a transistor y-parameter model. This canonical structure makes distortion contribution analysis independent of the actual structure of the device models, and greatly simplifies the interpretation of the results. In this paper we show how the proposed model can be extracted from the simulated data for either quasi-static or non-quasi-static device models.

引用

页码：241 / 244

页数：4