Flattening of oxidized diamond (111) surfaces with H2SO4/H2O2 solutions

被引：16
作者：
Tokuda, Norio [1 ]
Takeuchi, Daisuke [1 ]
Ri, Sung-Gi [1 ,2 ]
Umezawa, Hitoshi [3 ]
Yamabe, Kikuo [4 ,5 ]
Okushi, Hideyo [1 ,2 ]
Yamasaki, Satoshi [1 ,4 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Nanotechnol Res Inst, High Temp Quantum Elect Grp, Tsukuba, Ibaraki 3058568, Japan
[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan
[3] AIST, Diamond Res Ctr, Tsukuba, Ibaraki 3058568, Japan
[4] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan
[5] Univ Tsukuba, Tsukuba Res Ctr Interdisciplinary Mat Sci TIMS, Tsukuba, Ibaraki 3058571, Japan
来源：
DIAMOND AND RELATED MATERIALS | 2009年 / 18卷 / 2-3期
关键词：
Diamond film; Oxidation; Morphology; Surface roughness; Wet-process; DEPOSITED DIAMOND; GROWTH; HYDROGEN; FILMS; SUBSTRATE; EMISSION; JUNCTION; EPITAXY; SILICON; MESAS;
D O I：
10.1016/j.diamond.2008.10.010
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Changes in the topography of a diamond (111) surface with atomically flat and wide terraces, caused by immersion in HNO3/H2SO4 and H2SO4/H2O2 solutions were investigated by atomic force microscopy We. observed surface roughening from the HNO3/H2SO4 treatment, and flattening of the HNO3/H2SO4 treated surface from the H2SO4/H2O2 treatment. This suggests that the H2SO4/H2O2 treatment is an effective wet-process for preparing atomically flat oxidized diamond (111) surfaces. (C) 2008 Elsevier B.V. All rights reserved.
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收藏
页码：213 / 215
页数：3
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