Stability of Quasi-Two-Dimensional Electron-Hole Liquid in Semiconductor Structures of the Type-II

被引：4

作者：

Vasilchenko, A. A. ^{[1
]}

Kopytov, G. F. ^{[2
]}

Krivobok, V. S. ^{[3
,4
]}

Ermokhin, D. A. ^{[1
]}

机构：

[1] Kuban State Technol Univ, Krasnodar, Russia

[2] Kuban State Univ, Krasnodar, Russia

[3] Russian Acad Sci, Lebedev Phys Inst, Moscow, Russia

[4] Natl Res Nucl Univ MEPhI, Moscow, Russia

来源：

RUSSIAN PHYSICS JOURNAL | 2017年 / 59卷 / 10期

基金：

俄罗斯基础研究基金会;

关键词：

electron-hole liquid; binding energy; exciton; SIGE/SI QUANTUM-WELLS; BAND;

D O I：

10.1007/s11182-017-0962-5

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Analytical expressions are obtained for the energy of a quasi-two-dimensional electron-hole liquid (EHL) and the threshold value of the barrier height for electrons, above which formation of the direct EHL is impossible. It is shown that the state with a quasi-two-dimensional EHL can be energetically favorable in semiconductors with the anisotropy of masses and (or) a large number of equivalent valleys. A comparison of the calculation results with the experimental data for the Si/SiGe/Si structure is made.

引用

页码：1693 / 1698

页数：6

共 34 条

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