Thermal conductivity of nanocrystalline SiGe alloys using molecular dynamics simulations

被引:11
作者
da Cruz, Carolina Abs [1 ]
Katcho, Nebil A. [1 ]
Mingo, Natalio [1 ]
Veiga, Roberto G. A. [2 ]
机构
[1] CEA Grenoble, LITEN, F-38054 Grenoble, France
[2] Univ Sao Paulo, Dept Met & Mat Engn, Escola Politecn, Sao Paulo, Brazil
基金
巴西圣保罗研究基金会;
关键词
FIGURE-OF-MERIT;
D O I
10.1063/1.4826526
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have studied the effect of nanocrystalline microstructure on the thermal conductivity of SiGe alloys using molecular dynamics simulations. Nanograins are modeled using both the coincidence site lattice and the Voronoi tessellation methods, and the thermal conductivity is computed using the Green-Kubo formalism. We analyze the dependence of the thermal conductivity with temperature, grain size L, and misorientation angle. We find a power dependence of L-1/4 of the thermal conductivity with the grain size, instead of the linear dependence shown by non-alloyed nanograined systems. This dependence can be derived analytically underlines the important role that disorder scattering plays even when the grains are of the order of a few nm. This is in contrast to non-alloyed systems, where phonon transport is governed mainly by the boundary scattering. The temperature dependence is weak, in agreement with experimental measurements. The effect of angle misorientation is also small, which stresses the main role played by the disorder scattering. (C) 2013 AIP Publishing LLC.
引用
收藏
页数:5
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共 26 条
[1]   LATTICE THERMAL CONDUCTIVITY OF DISORDERED SEMICONDUCTOR ALLOYS AT HIGH TEMPERATURES [J].
ABELES, B .
PHYSICAL REVIEW, 1963, 131 (05) :1906-&
[2]   Comparison of theoretical and simulation-based predictions of grain-boundary Kapitza conductance in silicon [J].
Aubry, Sylvie ;
Kimmer, Christopher J. ;
Skye, Ashton ;
Schelling, Patrick K. .
PHYSICAL REVIEW B, 2008, 78 (06)
[3]   Thermoelectric properties of nanostructured Si1-xGex and potential for further improvement [J].
Bera, Chandan ;
Soulier, M. ;
Navone, C. ;
Roux, Guilhem ;
Simon, J. ;
Volz, S. ;
Mingo, Natalio .
JOURNAL OF APPLIED PHYSICS, 2010, 108 (12)
[4]   EPITAXIAL-GROWTH OF SI1-XGEX ON SI(100)2X1 - A MOLECULAR-DYNAMICS STUDY [J].
ETHIER, S ;
LEWIS, LJ .
JOURNAL OF MATERIALS RESEARCH, 1992, 7 (10) :2817-2827
[5]   Lattice thermal conductivity of semiconducting bulk materials: atomistic simulations [J].
He, Yuping ;
Savic, Ivana ;
Donadio, Davide ;
Galli, Giulia .
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2012, 14 (47) :16209-16222
[6]   Cubic AgPbmSbTe2+m:: Bulk thermoelectric materials with high figure of merit [J].
Hsu, KF ;
Loo, S ;
Guo, F ;
Chen, W ;
Dyck, JS ;
Uher, C ;
Hogan, T ;
Polychroniadis, EK ;
Kanatzidis, MG .
SCIENCE, 2004, 303 (5659) :818-821
[7]   Enhanced Thermoelectric Figure-of-Merit in Nanostructured p-type Silicon Germanium Bulk Alloys [J].
Joshi, Giri ;
Lee, Hohyun ;
Lan, Yucheng ;
Wang, Xiaowei ;
Zhu, Gaohua ;
Wang, Dezhi ;
Gould, Ryan W. ;
Cuff, Diana C. ;
Tang, Ming Y. ;
Dresselhaus, Mildred S. ;
Chen, Gang ;
Ren, Zhifeng .
NANO LETTERS, 2008, 8 (12) :4670-4674
[8]   Thermal conductivity of nanocrystalline silicon by direct molecular dynamics simulation [J].
Ju, Shenghong ;
Liang, Xingang .
JOURNAL OF APPLIED PHYSICS, 2012, 112 (06)
[9]   Role of light and heavy embedded nanoparticles on the thermal conductivity of SiGe alloys [J].
Kundu, A. ;
Mingo, N. ;
Broido, D. A. ;
Stewart, D. A. .
PHYSICAL REVIEW B, 2011, 84 (12)
[10]   Enhanced thermoelectric figure-of-merit in p-type nanostructured bismuth antimony tellurium alloys made from elemental chunks [J].
Ma, Yi ;
Hao, Qing ;
Poudel, Bed ;
Lan, Yucheng ;
Yu, Bo ;
Wang, Dezhi ;
Chen, Gang ;
Ren, Zhifeng .
NANO LETTERS, 2008, 8 (08) :2580-2584