Homoepitaxial diamond synthesis by DC arc plasma jet chemical vapor deposition

Homoepitaxial diamond films have been synthesized on (100) substrates by DC are plasma jet chemical vapor deposition. It was shown that fabrication of epitaxial film with a smooth surface is possible at an appropriate substrate temperature T-s with methane and carbon dioxide concentrations of 1% each. At T-s greater than or equal to 930 degrees C, pyramidal hillocks form on the surface of the film, and irregular grain particles appear. However, if the methane concentrations are raised, even when substrate temperature is high, epitaxial films with smooth surfaces are formed. Epitaxial diamond film with a smooth surface shows much stronger cathodoluminescence than the him with pyramidal hillocks. From the results of the X-ray double-crystal analysis, the crystallinity of the epitaxial diamond layer is higher than or equal to that of the substrate of high-pressure-synthesized diamond. These results indicate that synthesis of high quality diamond him at a high growth rate; by DC are plasma jet CVD, is possible.