Switching Loss Analysis of 4.5-kV-5.5-kA IGCTs Within a 3L-ANPC Phase Leg Prototype

被引:41
作者
Andler, Daniel [1 ,2 ]
Alvarez, Rodrigo [1 ]
Bernet, Steffen [1 ]
Rodriguez, Jose [2 ]
机构
[1] Tech Univ Dresden, Elektrotech Inst, Fak Elektrotech & Informat Tech, D-01062 Dresden, Germany
[2] Univ Tecn Federico Santa Maria, Dept Elect, Valparaiso 2390123, Chile
关键词
Integrated-gate commutated thyristors (IGCTs); inverters; multilevel systems; power semiconductor devices; snubbers;
D O I
10.1109/TIA.2013.2267331
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Three-level active neutral-point-clamped (NPC) (3L-ANPC) voltage-source converters (3L-ANPC-VSCs) enable additional switch states and commutations compared to the three-level NPC voltage-source converters (3L-NPC-VSCs). They are used to overcome one important disadvantage of the 3L-NPC-VSC, the unequal semiconductor loss distribution. With an accurate switching model (obtained directly from the measurements), it is possible to improve the junction temperature distribution among the power devices, increasing the 3L-ANPC-VSC output power and/or increasing the frequency and/or decreasing the derating of the converter. This paper presents the characterization of a 4.5-kV-5.5-kA integrated gate-commutated thyristor (IGCT) within a 3L-ANPC phase leg. A quantitative analysis of the switching losses using 5SHY55L4500 IGCTs and D1961SH45T press-pack diodes for a current range from 1 to 4.5 kA and junction temperatures between 25 degrees C and 125 degrees C is presented. The 3L-ANPC phase leg performs 32 different commutations. Each commutation exhibits different switching losses, as a result of the different commutation paths and their stray inductances. This switching energy range is presented and quantified. Finally, a simplified switching loss model considering the maximal switching losses in terms of the commutation current and the junction temperature is presented.
引用
收藏
页码:584 / 592
页数:9
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