Effect of glass tempering on microstructure and functional properties of SnO2:F thin film prepared by atmosphere pressure chemical vapor deposition

被引:15
作者
Gao, Qian [1 ,2 ]
Liu, Qiying [3 ]
Li, Ming [1 ,2 ]
Li, Xiang [1 ,2 ]
Liu, Yong [1 ,2 ]
Song, Chenlu [1 ,2 ]
Wang, Jianxun [1 ,2 ]
Liu, Junbo [3 ]
Shen, Ge [1 ,2 ]
Han, Gaorong [1 ,2 ]
机构
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
[2] Zhejiang Univ, Ctr Electron Microscopy, Dept Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China
[3] Hangzhou Bluestar New Mat Technol Co Ltd, Hangzhou 310012, Zhejiang, Peoples R China
基金
中国国家自然科学基金;
关键词
Fluorine-doped tin oxide; Sandwich structure; Low-emission property; Glass tempering; TIN OXIDE-FILMS; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; SCATTERING MECHANISM; HIGHLY TRANSPARENT; ROOM-TEMPERATURE; SPRAY-PYROLYSIS; GAS SENSORS; ABSORPTION;
D O I
10.1016/j.tsf.2013.02.099
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The low-emission glass was prepared via depositing fluorine-doped tin oxide thin film on glass substrate by atmospheric pressure chemical vapor deposition method. The as-deposited low-emission glass was found to present a SnO2:F/SiCxOy/glass sandwich structure via focused ion beam technique and transmission microscopic measurement. After tempering process at similar to 650 degrees C with varied periods, the electrical and optical properties of the SnO2:F thin film remained stable for less than 10 min, but decreased dramatically when the tempering period exceeded 10 min, which was mainly due to the oxygen chemisorptions and fluorine ion diffusion. It was observed that the SnO2:F thin films presented uniform polycrystalline nature of cassiterite structure throughout the tempering process. The study has therefore suggested the appropriate tempering conditions for the SnO2:F low-emission glass, and provided a critical guidance for further energy-saving glass applications. (C) 2013 Elsevier B. V. All rights reserved.
引用
收藏
页码:357 / 361
页数:5
相关论文
共 31 条
  • [1] Ann B. D., 2008, CRYST GROWTH, V310, P3303, DOI DOI 10.1016/J.JCRYSGRO.2008.04.014
  • [2] Synthesis and characterization of nano-crystalline fluorine-doped tin oxide thin films by sol-gel method
    Banerjee, AN
    Kundoo, S
    Saha, P
    Chattopadhyay, KK
    [J]. JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 2003, 28 (01) : 105 - 110
  • [3] Organic light emitting diodes using a Ga:ZnO anode
    Berry, J. J.
    Ginley, D. S.
    Burrows, P. E.
    [J]. APPLIED PHYSICS LETTERS, 2008, 92 (19)
  • [4] Structural, optical and electrical peculiarities of r.f. plasma sputtered indium tin oxide films
    Boycheva, Sylvia
    Sytchkova, Anna Krasilnikova
    Grilli, Maria Luisa
    Piegari, Angela
    [J]. THIN SOLID FILMS, 2007, 515 (24) : 8469 - 8473
  • [5] Response behaviour of tin oxide thin film gas sensors grown by MOCVD
    Brown, JR
    Haycock, PW
    Smith, LM
    Jones, AC
    Williams, EW
    [J]. SENSORS AND ACTUATORS B-CHEMICAL, 2000, 63 (1-2) : 109 - 114
  • [6] The electrical and optical properties of direct-patternable SnO2 thin films containing Pt nanoparticles at various annealing temperatures
    Choi, Yong-June
    Park, Hyung-Ho
    Golledge, Stephen
    Johnson, David C.
    Chang, Ho Jung
    Jeon, Hyeongtag
    [J]. SURFACE & COATINGS TECHNOLOGY, 2010, 205 (07) : 2649 - 2653
  • [7] Characterization of transparent conducting oxides
    Coutts, TJ
    Young, DL
    Li, XN
    [J]. MRS BULLETIN, 2000, 25 (08) : 58 - 65
  • [8] Study of annealing time on sol-gel indium tin oxide films on glass
    De, A.
    Biswas, P. K.
    Manara, J.
    [J]. MATERIALS CHARACTERIZATION, 2007, 58 (07) : 629 - 636
  • [9] ELECTRICAL PROPERTIES OF HIGH-QUALITY STANNIC OXIDE CRYSTALS
    FONSTAD, CG
    REDIKER, RH
    [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (07) : 2911 - &
  • [10] Transparent conducting oxides for photovoltaics
    Fortunato, Elvira
    Ginley, David
    Hosono, Hideo
    Paine, David C.
    [J]. MRS BULLETIN, 2007, 32 (03) : 242 - 247