Effects of withdrawal speed on the microstructural and optical properties of sol-gel grown ZnO:Al thin films

被引:11
作者
Aydemir, Sinem [1 ]
机构
[1] Eskisehir Osmangazi Univ, Dept Phys, TR-26480 Eskisehir, Turkey
关键词
Sol-gel method; Thin films; XRD; AFM; Photoluminescence; ZINC-OXIDE FILMS; SUBSTRATE-TEMPERATURE; ROOM-TEMPERATURE; CONDUCTIVE AL; TRANSPARENT; DEPOSITION; RF; PHOTOLUMINESCENCE; ORIENTATION; PRESSURE;
D O I
10.1016/j.vacuum.2015.05.041
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Nanocrystalline Al-doped ZnO (AZO) thin films were deposited on glass substrates by using sol gel dip coating technique at different withdrawal speeds (WS: 20,40 and 80 mm/min). The effects of WS on the crystalline structure, morphology and optical properties of the obtained films were extensively investigated using a series of characterization techniques, including X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), and photoluminescence (PL). It was found that, the WS significantly affects the crystalline structure, morphology and optical properties of the films. XRD analysis confirmed that the films are polycrystalline in nature having hexagonal crystal structure with preferred grain orientations along (100), (002) and (101) directions. SEM and AFM observations indicate a smooth surface morphology with small rounded grains. The optical band-gap energy (E-g) was evaluated as 3.20-3.27 eV, which increased with increasing withdrawal rate. At room temperature, a photoluminescence was observed from AZO thin films and the origin of the emission was discussed. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码:51 / 58
页数:8
相关论文
共 67 条
[41]   THE INTERPRETATION OF THE PROPERTIES OF INDIUM ANTIMONIDE [J].
MOSS, TS .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1954, 67 (418) :775-782
[42]   Al-doped ZnO thin films by sol-gel method [J].
Musat, V ;
Teixeira, B ;
Fortunato, E ;
Monteiro, RCC ;
Vilarinho, P .
SURFACE & COATINGS TECHNOLOGY, 2004, 180 :659-662
[43]   Sol-gel preparation of ZnO films with extremely preferred orientation along (002) plane from zinc acetate solution [J].
Ohyama, M ;
Kozuka, H ;
Yoko, T .
THIN SOLID FILMS, 1997, 306 (01) :78-85
[44]   The physical properties of Al-doped zinc oxide films prepared by RF magnetron sputtering [J].
Park, KC ;
Ma, DY ;
Kim, KH .
THIN SOLID FILMS, 1997, 305 (1-2) :201-209
[45]   The Scherrer formula for x-ray particle size determination [J].
Patterson, AL .
PHYSICAL REVIEW, 1939, 56 (10) :978-982
[46]   Structural and PL properties of Cu-doped ZnO films [J].
Peng, Xingping ;
Xu, Jinzhang ;
Zang, Hang ;
Wang, Boyu ;
Wang, Zhiguang .
JOURNAL OF LUMINESCENCE, 2008, 128 (03) :297-300
[47]  
Sagar P, 2005, MATER SCI-POLAND, V23, P685
[48]   Photoluminescence and absorption in sol-gel-derived ZnO films [J].
Sagar, Parmod ;
Shishodia, P. K. ;
Mehra, R. M. ;
Okada, H. ;
Wakahara, Akihiro ;
Yoshida, Akira .
JOURNAL OF LUMINESCENCE, 2007, 126 (02) :800-806
[49]   Structural, electrical and optical properties of ZnO thin films deposited by sol-gel method [J].
Sahal, M. ;
Hartiti, B. ;
Ridah, A. ;
Mollar, M. ;
Mari, B. .
MICROELECTRONICS JOURNAL, 2008, 39 (12) :1425-1428
[50]   Al-doped ZnO powdered materials: Al solubility limit and IR absorption properties [J].
Serier, Helene ;
Gaudon, Manuel ;
Menetrier, Michel .
SOLID STATE SCIENCES, 2009, 11 (07) :1192-1197