Effects of withdrawal speed on the microstructural and optical properties of sol-gel grown ZnO:Al thin films

被引:11
作者
Aydemir, Sinem [1 ]
机构
[1] Eskisehir Osmangazi Univ, Dept Phys, TR-26480 Eskisehir, Turkey
关键词
Sol-gel method; Thin films; XRD; AFM; Photoluminescence; ZINC-OXIDE FILMS; SUBSTRATE-TEMPERATURE; ROOM-TEMPERATURE; CONDUCTIVE AL; TRANSPARENT; DEPOSITION; RF; PHOTOLUMINESCENCE; ORIENTATION; PRESSURE;
D O I
10.1016/j.vacuum.2015.05.041
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Nanocrystalline Al-doped ZnO (AZO) thin films were deposited on glass substrates by using sol gel dip coating technique at different withdrawal speeds (WS: 20,40 and 80 mm/min). The effects of WS on the crystalline structure, morphology and optical properties of the obtained films were extensively investigated using a series of characterization techniques, including X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), and photoluminescence (PL). It was found that, the WS significantly affects the crystalline structure, morphology and optical properties of the films. XRD analysis confirmed that the films are polycrystalline in nature having hexagonal crystal structure with preferred grain orientations along (100), (002) and (101) directions. SEM and AFM observations indicate a smooth surface morphology with small rounded grains. The optical band-gap energy (E-g) was evaluated as 3.20-3.27 eV, which increased with increasing withdrawal rate. At room temperature, a photoluminescence was observed from AZO thin films and the origin of the emission was discussed. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码:51 / 58
页数:8
相关论文
共 67 条
[1]   Influence of thermal annealing on optical and electrical properties of ZnO films prepared by electron beam evaporation [J].
Aghamalyan, NR ;
Gambaryan, IA ;
Goulanian, EK ;
Hovsepyan, RK ;
Kostanyan, RB ;
Petrosyan, SI ;
Vardanyan, ES ;
Zerrouk, AF .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2003, 18 (06) :525-529
[2]  
Al-ahmad A, 2003, FABRICATION CHARACTE
[3]  
[Anonymous], 1980, STRUCTURE METALS
[4]   Influence of the deposition pressure on the properties of transparent and conductive ZnO:Ga thin-film produced by r.f. sputtering at room temperature [J].
Assunçao, V ;
Fortunato, E ;
Marques, A ;
Aguas, H ;
Ferreira, I ;
Costa, MEV ;
Martins, R .
THIN SOLID FILMS, 2003, 427 (1-2) :401-405
[5]   Effects of withdrawal speed on the structural and optical properties of sol-gel derived ZnO thin films [J].
Aydemir, Sinem ;
Karakaya, Seniye .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2015, 373 :33-39
[6]   Influence of Al-doping on microstructure and optical properties of sol-gel derived CdO thin films [J].
Aydemir, Sinem ;
Kose, Salih ;
Kilickaya, M. Selami ;
Ozkan, Vildan .
SUPERLATTICES AND MICROSTRUCTURES, 2014, 71 :72-81
[7]   Effect of heat treatment on ITO film properties and ITO/p-Si interface [J].
Balasundaraprabhu, R. ;
Monakhov, E. V. ;
Muthukumarasamy, N. ;
Nilsen, O. ;
Svensson, B. G. .
MATERIALS CHEMISTRY AND PHYSICS, 2009, 114 (01) :425-429
[8]   High temperature stability of postgrowth annealed transparent and conductive ZnO:Al films [J].
Bayraktaroglu, Burhan ;
Leedy, Kevin ;
Bedford, Robert .
APPLIED PHYSICS LETTERS, 2008, 93 (02)
[9]  
Brinker C.F., 1990, SOL GEL SCI, P788
[10]  
Brinker C. J., 1990, SOL GEL SCI