Numerical modeling of TeraHertz electronic devices

被引：9

作者：

Varani, L. ^{[1
]}

Palermo, C. ^{[1
]}

Millithaler, J. F. ^{[1
]}

Vaissiere, J. C. ^{[1
]}

Starikov, E. ^{[2
]}

Shiktorov, P. ^{[2
]}

Gruzinskis, V. ^{[2
]}

Mateos, J. ^{[3
]}

Perez, S. ^{[3
]}

Pardo, D. ^{[3
]}

Gonzalez, T. ^{[3
]}

机构：

[1] Univ Montpellier 2, Ctr Elect & Microoptoelect Montpellier CNRS UMR 5, F-34095 Montpellier, France

[2] Inst Semicond Phys, LT-2600 Vilnius, Lithuania

[3] Univ Salamanca, Dept Fis Aplicada, E-37008 Salamanca, Spain

来源：

JOURNAL OF COMPUTATIONAL ELECTRONICS | 2006年 / 5卷 / 2-3期

关键词：

TeraHertz; Monte Carlo; Nitrides; Plasma oscillations;

D O I：

10.1007/s10825-006-8822-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate by means of Monte Carlo simulations the physical processes associated with the emission of TeraHertz radiation in different electronic devices. We analyze four alternative and complementary strategies which seem to be promising candidates to obtain the TeraHertz emission: (1) a nitride maser based on the optical-phonon transit-time resonance, (2) the high-order harmonic generation in bulk materials and nanometric Schottky-barrier diodes, (3) the excitation of coherent plasma oscillations in micron and submicron diodes, (4) the current instabilities and plasma oscillations in high electron mobility transistors (HEMT). The numerical results show that several physical mechanisms can be exploited to increase significantly the operating frequency of these devices and the best conditions to optimize the radiation emission in the TeraHertz range are studied in detail.

引用

页码：71 / 77

页数：7

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