Photodarkening in amorphous As2S3 thin films

被引：0

作者：

Liu, QM ^{[1
]}

Gan, FX ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2002年 / 19卷 / 01期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The photodarkening effect in amorphous As2S3 films is studied. The optical absorption edge shifts to a lower energy after illumination at the bandgap light of 514.5 nm wavelength by an argon laser. The shift in well-annealed films can be recovered by annealing at 180degreesC for 1 h but in un-annealed films it is irreversible. In addition, it was found that the magnitude of photodarkening DeltaE increased with the increase of illumination light intensity and illumination time. The reversibility of photodarkening in amorphous As2S3 films can be applied in optical memories,

引用

页码：124 / 126

页数：3

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