Sputtered-Growth of High-Temperature Seed-Layer Assisted β-Ga2O3Thin Film on Silicon-Substrate for Cost-Effective Solar-Blind Photodetector Application

beta-Ga2O3 thin films was grown on cost-effective p-Si(100) substrate by sputtering technique. The evolution of crystalline structure with growth parameters revealed that the gallium oxide thin film grown on the high-temperature seed layer and various optimised growth parameters like sputtering power, deposition pressure and pre-substrate annealing has been proved extremely beneficial in exhibiting excellent crystalline quality. However, the direct growth of beta-Ga(2)O(3)on Si substrate with seed-layer was found to be amorphous in nature. The discussion about the critical role of varied growth conditions were carried in detail. The photoresponse of the optimized device showed a photoresponsivity of 95.64 AW(-1)and a corresponding quantum efficiency of 4.73 x 10(4)% at moderate bias under 250 nm illumination which is higher than most of the devices being reported on planar beta-Ga(2)O(3)solar-blind photodetectors deposited on high cost substrates. Moreover, the device showed the high transient response at moderate as well as at self-bias mode with good reproducibility and stability. The rise and decay time of the photodetector at self-powered mode was found to be in millisecond (58.3 ms/34.7 ms). This work paves the alternative way towards the fabrication of beta-Ga(2)O(3)solar-blind photodetector on cost-effective substrate and compatible with mature Si technology. (c) 2020 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited. This is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial No Derivatives 4.0 License (CC BYNC-ND, http://creativecommons.org/licenses/by-nc-nd/4.0/), which permits non-commercial reuse, distribution, and reproduction in any medium, provided the original work is not changed in any way and is properly cited. For permission for commercial reuse, please email: permissions@ioppublishing.org.