Electronic Structure, Optical Properties and Electronic Conductivity of Silicon Carbide Nanowires

被引：4

作者：

Andriotis, Antonis N. ^{[2
]}

Richter, Ernst ^{[3
]}

Lisenkov, Sergey ^{[4
]}

Sheetz, R. Michael ^{[1
]}

Menon, Madhu ^{[1
,5
]}

机构：

[1] Univ Kentucky, Ctr Computat Sci, Lexington, KY 40506 USA

[2] Fdn Res & Technol Hellas, Inst Elect Struct & Laser, Iraklion 71110, Crete, Greece

[3] Daimler AG GR PSS, D-89081 Ulm, Germany

[4] Univ S Florida, Dept Phys, Tampa, FL 33620 USA

[5] Univ Kentucky, Dept Phys, Lexington, KY 40506 USA

来源：

JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE | 2012年 / 9卷 / 11期

基金：

美国国家科学基金会;

关键词：

First-Principles Calculation; Nanostructures; Molecular Dynamics; BETA-SIC NANOWIRES; QUANTUM CONDUCTIVITY; TEMPERATURE; SPECTRA; GROWTH; RAMAN;

D O I：

10.1166/jctn.2012.2606

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report results of theoretical calculations for optical properties and electronic conductivity for a 6H-SiC polytype nanowire with a single crystalline structure. The optical spectra show allowed transitions in the visible range. The current versus voltage (IV) results found are qualitatively similar to the experimental IV curves for SiC nanowires reported.

引用

页码：2008 / 2012

页数：5

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