Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy

被引：69

作者：

Cai, Hui ^{[1
]}

Chen, Bin ^{[1
]}

Wang, Gang ^{[2
]}

Soignard, Emmanuel ^{[3
]}

Khosravi, Afsaneh ^{[1
]}

Manca, Marco ^{[2
]}

Marie, Xavier ^{[2
]}

Chang, Shery L. Y. ^{[3
]}

Urbaszek, Bernhard ^{[2
]}

Tongay, Sefaattin ^{[1
]}

机构：

[1] Arizona State Univ, Sch Engn Matter Transport & Energy, Tempe, AZ 85287 USA

[2] Univ Toulouse, INSA CNRS UPS, LPCNO, 135 Ave Rangueil, F-31077 Toulouse, France

[3] Arizona State Univ, LeRoy Eyring Ctr Solid State Sci, Tempe, AZ 85287 USA

来源：

ADVANCED MATERIALS | 2017年 / 29卷 / 08期

基金：

欧洲研究理事会; 美国国家科学基金会;

关键词：

gallium telluride; physical vapor transport; pseudo-1D materials; CHEMICAL-VAPOR-DEPOSITION; MOS2 ATOMIC LAYERS; SINGLE-LAYER; THERMAL-CONDUCTIVITY; OPTICAL-PROPERTIES; GALLIUM SELENIDE; PHASE GROWTH; BAND; CRYSTALLINE; TELLURIDE;

D O I：

10.1002/adma.201605551

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Bulk nacre-like composites with mineral nano-interconnectivity at the same length scale as in the biological material are produced using magnetic alignment and selective sintering techniques. These materials display stiffness and strength levels comparable to that of continuous fiber composites with the advantage of easier processability inherent of discontinuous composites. This opens new possibilities to produce parts with more complex designs.

引用

页数：7

共 37 条

[1] Linearly Polarized Excitons in Single- and Few-Layer ReS2 Crystals [J].

Aslan, Ozgur Burak ;

Chenet, Daniel A. ;

van der Zande, Arend M. ;

Hone, James C. ;

Heinz, Tony F. .

ACS PHOTONICS, 2016, 3 (01) :96-101

[2] Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy [J].

Cai, Hui ;

Chen, Bin ;

Wang, Gang ;

Soignard, Emmanuel ;

Khosravi, Afsaneh ;

Manca, Marco ;

Marie, Xavier ;

Chang, Shery L. Y. ;

Urbaszek, Bernhard ;

Tongay, Sefaattin .

ADVANCED MATERIALS, 2017, 29 (08)

[3] Band Engineering by Controlling vdW Epitaxy Growth Mode in 2D Gallium Chalcogenides [J].

Cai, Hui ;

Soignard, Emmanuel ;

Ataca, Can ;

Chen, Bin ;

Ko, Changhyun ;

Aoki, Toshihiro ;

Pant, Anupum ;

Meng, Xiuqing ;

Yang, Shengxue ;

Grossman, Jeffrey ;

Ogletree, Frank D. ;

Tongay, Sefaattin .

ADVANCED MATERIALS, 2016, 28 (34) :7375-7382

[4] NEAR-BAND-EDGE OPTICAL-PROPERTIES OF GASEXTE1-X MIXED-CRYSTALS [J].

CAMASSEL, J ;

MERLE, P ;

MATHIEU, H ;

GOUSKOV, A .

PHYSICAL REVIEW B, 1979, 19 (02) :1060-1068

[5] Strong enhancement of photoresponsivity with shrinking the electrodes spacing in few layer GaSe photodetectors [J].

Cao, Yufei ;

Cai, Kaiming ;

Hu, Pingan ;

Zhao, Lixia ;

Yan, Tengfei ;

Luo, Wengang ;

Zhang, Xinhui ;

Wu, Xiaoguang ;

Wang, Kaiyou ;

Zheng, Houzhi .

SCIENTIFIC REPORTS, 2015, 5

[6] Bandgap Restructuring of the Layered Semiconductor Gallium Telluride in Air [J].

Fonseca, Jose J. ;

Tongay, Sefaattin ;

Topsakal, Mehmet ;

Chew, Annabel R. ;

Lin, Alan J. ;

Ko, Changhyun ;

Luce, Alexander V. ;

Salleo, Alberto ;

Wu, Junqiao ;

Dubon, Oscar D. .

ADVANCED MATERIALS, 2016, 28 (30) :6465-+

[7] Chemical vapor deposition of hexagonal gallium selenide and telluride films from cubane precursors: Understanding the envelope of molecular control [J].

Gillan, EG ;

Barron, AR .

CHEMISTRY OF MATERIALS, 1997, 9 (12) :3037-3048

[8] In-Plane Optical Anisotropy of Layered Gallium Telluride [J].

Huang, Shengxi ;

Tatsumi, Yuki ;

Ling, Xi ;

Guo, Huaihong ;

Wang, Ziqiang ;

Watson, Garrett ;

Puretzky, Alexander A. ;

Geohegan, David B. ;

Kong, Jing ;

Li, Ju ;

Yang, Teng ;

Saito, Riichiro ;

Dresselhaus, Mildred S. .

ACS NANO, 2016, 10 (09) :8964-8972

[9] Vacancy Formation and Oxidation Characteristics of Single Layer TiS3 [J].

Iyikanat, F. ;

Sahin, H. ;

Senger, R. T. ;

Peeters, F. M. .

JOURNAL OF PHYSICAL CHEMISTRY C, 2015, 119 (19) :10709-10715

[10] Anisotropic Thermal Conductivity of Exfoliated Black Phosphorus [J].

Jang, Hyejin ;

Wood, Joshua D. ;

Ryder, Christopher R. ;

Hersam, Mark C. ;

Cahill, David G. .

ADVANCED MATERIALS, 2015, 27 (48) :8017-8022

← 1 2 3 4 →