Alternating current thin film electroluminescent devices have been fabricated using aluminum-doped zinc oxide (ZnO:Al) as transparent conducting layer, aluminum oxide (Al2O3) as insulating layers, and manganese-doped zinc sulfide (ZnS:Mn) as electroluminescent layer. All these films were deposited by the ultrasonic spray pyrolysis technique at the same temperature (450 degrees) on glass substrates, forming a standard MISIM (metal-insulator-semiconductor-insulator-metal) configuration. The electroluminescence of MISIM devices with a total thickness of similar to 1330 nm was investigated by applying a sinusoidal voltage with a frequency of 10 kHz. The devices showed orange-emission spectra centered at approximately 570nm, characteristic of T-4(1) -> (6)A(1) radiative transitions of Mn2+ ions in the ZnS host, with a sharp intensity increase upon increasing the root mean square voltage above a threshold of 25 V and a rapid saturation for voltages higher than 38 V. The electroluminescent emission of these MISIM structures can be observed with the naked eye under ambient illumination. (C) 2013 Elsevier B. V. All rights reserved.
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Chinese Acad Sci, Lab Excited State Proc, Changchun 130021, Peoples R ChinaChinese Acad Sci, Lab Excited State Proc, Changchun 130021, Peoples R China
Cao, LX
;
Zhang, JH
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机构:Chinese Acad Sci, Lab Excited State Proc, Changchun 130021, Peoples R China
Zhang, JH
;
Ren, SL
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机构:Chinese Acad Sci, Lab Excited State Proc, Changchun 130021, Peoples R China
Ren, SL
;
Huang, SH
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机构:Chinese Acad Sci, Lab Excited State Proc, Changchun 130021, Peoples R China
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INST POLITECN NACL,CTR INVEST & ESTUDIOS AVANZADOS,DEPT FIS,MEXICO CITY 07000,DF,MEXICOINST POLITECN NACL,CTR INVEST & ESTUDIOS AVANZADOS,DEPT FIS,MEXICO CITY 07000,DF,MEXICO
GARCIA, M
;
ALONSO, JC
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INST POLITECN NACL,CTR INVEST & ESTUDIOS AVANZADOS,DEPT FIS,MEXICO CITY 07000,DF,MEXICOINST POLITECN NACL,CTR INVEST & ESTUDIOS AVANZADOS,DEPT FIS,MEXICO CITY 07000,DF,MEXICO
ALONSO, JC
;
FALCONY, C
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INST POLITECN NACL,CTR INVEST & ESTUDIOS AVANZADOS,DEPT FIS,MEXICO CITY 07000,DF,MEXICOINST POLITECN NACL,CTR INVEST & ESTUDIOS AVANZADOS,DEPT FIS,MEXICO CITY 07000,DF,MEXICO
FALCONY, C
;
ORTIZ, A
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INST POLITECN NACL,CTR INVEST & ESTUDIOS AVANZADOS,DEPT FIS,MEXICO CITY 07000,DF,MEXICOINST POLITECN NACL,CTR INVEST & ESTUDIOS AVANZADOS,DEPT FIS,MEXICO CITY 07000,DF,MEXICO
机构:
Chinese Acad Sci, Lab Excited State Proc, Changchun 130021, Peoples R ChinaChinese Acad Sci, Lab Excited State Proc, Changchun 130021, Peoples R China
Cao, LX
;
Zhang, JH
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h-index: 0
机构:Chinese Acad Sci, Lab Excited State Proc, Changchun 130021, Peoples R China
Zhang, JH
;
Ren, SL
论文数: 0引用数: 0
h-index: 0
机构:Chinese Acad Sci, Lab Excited State Proc, Changchun 130021, Peoples R China
Ren, SL
;
Huang, SH
论文数: 0引用数: 0
h-index: 0
机构:Chinese Acad Sci, Lab Excited State Proc, Changchun 130021, Peoples R China
机构:
INST POLITECN NACL,CTR INVEST & ESTUDIOS AVANZADOS,DEPT FIS,MEXICO CITY 07000,DF,MEXICOINST POLITECN NACL,CTR INVEST & ESTUDIOS AVANZADOS,DEPT FIS,MEXICO CITY 07000,DF,MEXICO
GARCIA, M
;
ALONSO, JC
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h-index: 0
机构:
INST POLITECN NACL,CTR INVEST & ESTUDIOS AVANZADOS,DEPT FIS,MEXICO CITY 07000,DF,MEXICOINST POLITECN NACL,CTR INVEST & ESTUDIOS AVANZADOS,DEPT FIS,MEXICO CITY 07000,DF,MEXICO
ALONSO, JC
;
FALCONY, C
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机构:
INST POLITECN NACL,CTR INVEST & ESTUDIOS AVANZADOS,DEPT FIS,MEXICO CITY 07000,DF,MEXICOINST POLITECN NACL,CTR INVEST & ESTUDIOS AVANZADOS,DEPT FIS,MEXICO CITY 07000,DF,MEXICO
FALCONY, C
;
ORTIZ, A
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h-index: 0
机构:
INST POLITECN NACL,CTR INVEST & ESTUDIOS AVANZADOS,DEPT FIS,MEXICO CITY 07000,DF,MEXICOINST POLITECN NACL,CTR INVEST & ESTUDIOS AVANZADOS,DEPT FIS,MEXICO CITY 07000,DF,MEXICO