Room-temperature photoluminescence of ZnO/MgO multiple quantum wells on Si (001) substrates

被引：19
作者：
Sun, C. W. [1 ]
Xin, P. [1 ]
Liu, Z. W. [1 ]
Zhang, Q. Y. [1 ]
机构：
[1] Dalian Univ Technol, State Key Lab Mat Modificat Laser Ion Electron Be, Dalian 116024, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 22期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1063/1.2207553
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Wurtzite ZnO/MgO superlattices were grown on Si (001) substrates at 750 degrees C with a radio-frequency reactive magnetron sputtering method. X-ray diffraction analysis revealed the superlattice to be a highly textured ZnO (001) layer and to be of high crystallinity and homogeneity in thickness. The periodic layer thickness was determined to be 1.85-17.72 nm. Room-temperature photoluminescence was detected for all the samples and showed that the blueshift varied with the well width of the ZnO layer, being consistent with the expectation of quantum-size effect. (c) 2006 American Institute of Physics.
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页数：3
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