A New Class of High Mobility Hole Transport Materials

被引:0
|
作者
Witt, Wolfgang [1 ]
Gelsen, Olaf [1 ]
Tschunarjew, Mirka [1 ]
机构
[1] Sensient Imaging Technol GmbH Wolfen, Wolfen, Germany
来源
NIP24/DIGITAL FABRICATION 2008: 24TH INTERNATIONAL CONFERENCE ON DIGITAL PRINTING TECHNOLOGIES, TECHNICAL PROGRAM AND PROCEEDINGS | 2008年
关键词
D O I
暂无
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
We present a new class of Hole Transport Materials. After the discussion of the design concepts of hole transport materials with enhanced hole mobility, we will report on the physical properties of selected candidates, hole mobilities as well as the electrophotographic performance of the materials in two layer organic photoreceptors
引用
收藏
页码:188 / 190
页数:3
相关论文
共 50 条
  • [41] New Electrode-Friendly Triindole Columnar phases with High Hole Mobility
    Talarico, Mara
    Termine, Roberto
    Garcia-Frutos, Eva M.
    Omenat, Ana
    Serrano, Jose L.
    Gomez-Lor, Berta
    Golemme, Attilio
    CHEMISTRY OF MATERIALS, 2008, 20 (21) : 6589 - 6591
  • [42] Hole Transport and Electrical Properties in a High-Mobility n-Type Semiconducting Polymer
    Liu, M. L.
    Wang, L. G.
    JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2017, 12 (03) : 209 - 215
  • [43] Quantum Transport of a High Mobility Two Dimensional Hole Gas in a Strained Ge Quantum Well
    Morrison, C.
    Myronov, M.
    Foronda, J.
    Casteleiro, C.
    Halpin, J. E.
    Rhead, S. D.
    Leadley, D. R.
    2014 7TH INTERNATIONAL SILICON-GERMANIUM TECHNOLOGY AND DEVICE MEETING (ISTDM), 2014, : 105 - 106
  • [44] Asymmetric electron and hole transport in a high-mobility n-type conjugated polymer
    Wetzelaer, Gert-Jan A. H.
    Kuik, Martijn
    Olivier, Yoann
    Lemaur, Vincent
    Cornil, Jerome
    Fabiano, Simone
    Loi, Maria Antonietta
    Blom, Paul W. M.
    PHYSICAL REVIEW B, 2012, 86 (16):
  • [45] Analysis of hole transport in a high-mobility conjugated polymer: evidence for the absence of correlated disorder
    Liu, M. L.
    Wang, L. G.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2018, 20 (3-4): : 163 - 168
  • [46] Demonstration of high-mobility electron and hole transport in a single InGaSb well for complementary circuits
    Bennett, Brian R.
    Ancona, Mario G.
    Champlain, James G.
    Papanicolaou, Nicolas A.
    Boos, J. Brad
    JOURNAL OF CRYSTAL GROWTH, 2009, 312 (01) : 37 - 40
  • [47] Molecular "Flower" as the High-Mobility Hole-Transport Material for Perovskite Solar Cells
    Kou, Chun
    Feng, Shiyu
    Li, Hongshi
    Li, Wenhua
    Li, Dongmei
    Meng, Qingbo
    Bo, Zhishan
    ACS APPLIED MATERIALS & INTERFACES, 2017, 9 (50) : 43855 - 43860
  • [48] Electrical injection and transport in Teflon -diluted hole transport materials
    Kim, Taehwan
    Afolayan, Emmanuel
    Ruud, Christian J.
    Kim, Hoyeon
    Price, Jared S.
    Brigeman, Alyssa
    Shen, Yufei
    Giebink, Noel C.
    ORGANIC ELECTRONICS, 2020, 83
  • [49] High-Hole-Mobility Metal–Organic Framework as Dopant-Free Hole Transport Layer for Perovskite Solar Cells
    Ruonan Wang
    Weikang Yu
    Cheng Sun
    Kashi Chiranjeevulu
    Shuguang Deng
    Jiang Wu
    Feng Yan
    Changsi Peng
    Yanhui Lou
    Gang Xu
    Guifu Zou
    Nanoscale Research Letters, 17
  • [50] Simultaneous defect passivation and hole mobility enhancement of perovskite solar cells by incorporating anionic metal-organic framework into hole transport materials
    Zhang, Jindan
    Guo, Shanshan
    Zhu, Mengqi
    Li, Chi
    Chen, Jingan
    Liu, Lizhen
    Xiang, Shengchang
    Zhang, Zhangjing
    CHEMICAL ENGINEERING JOURNAL, 2021, 408