Investigation of polymorphism and domain distribution in SiC wafers by simple and high resolution x-ray diffraction

被引：0
|
作者：
Ellison, A [1 ]
DiPersio, J [1 ]
Brylinski, C [1 ]
机构：
[1] UNIV SCI & TECH LILLE FLANDRES ARTOIS,F-59655 VILLENEUVE DASCQ,FRANCE
来源：
SILICON CARBIDE AND RELATED MATERIALS 1995 | 1996年 / 142卷
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A silicon carbide polytype identification technique by X-ray diffraction is used to reveal the presence of parasitic 6H and 3C phases in commercial 4H ''Research Grade'' wafers grown by the modified-Lely process. High resolution X-ray diffraction rocking curves show strong mosaic effects and topographies display high dislocation densities (10(5) cm(-2) range). In 4H ''Production Grade'' wafers no polymorphism is observed and crystalline quality is greatly improved: domain size is enlarged and observable dislocation densities decreased to 2.10(3) cm(-2).
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页码：441 / 444
页数：4
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