Strongly localized states at the band-inverting interface with periodic lattice dislocations

被引:1
作者
Gaafer, Fatma Nafaa [1 ]
Peng, Yu-Gui [1 ,2 ]
Zhao, De-Gang [1 ]
Zhu, Xue-Feng [1 ,2 ]
机构
[1] Huazhong Univ Sci & Technol, Sch Phys, Wuhan 430074, Peoples R China
[2] Huazhong Univ Sci & Technol, Innovat Inst, Wuhan 430074, Peoples R China
基金
中国国家自然科学基金;
关键词
ANDERSON LOCALIZATION; ULTRASOUND; INDEX; LIGHT;
D O I
10.1063/1.4968181
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We have constructed an interface which separates two different phononic crystals (PCs) with respectively effective negative density and negative bulk modulus through band inversion. Besides the eigenstates in weak localization stemming from the sign flipping of imaginary acoustic impedances at the interface, we observed an unusual type of strongly localized states at the band-inverting contact after a periodic lattice dislocation is purposely introduced. From the layered multiple scattering theory, we have uncovered that the underlying physics for these unique interface states in the hetero-structured PC are due to nontrivial constructive interferences of high-ordered Mie-scattered acoustic waves from the mismatched cylinders. The intriguing features include interface resonances of enormous quality factors (similar to 3 x 10(4)) and chiral field patterns along the dislocation line. We envision potential applications of the work in slow sound trapping, notch filtering, and nonlinearity strengthening, etc. (C) 2016 Author(s).
引用
收藏
页数:9
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