Sub-nanosecond pulse generation in a microchip Nd:La0.15Gd0.85VO4 laser

被引：1
作者：
Han, Shuo [1 ]
机构：
[1] Qufu Normal Univ, Sch Phys & Phys Engn, Shandong Prov Key Lab Laser Polarizat & Informat, Qufu 273165, Shandong, Peoples R China
来源：
INFRARED PHYSICS & TECHNOLOGY | 2020年 / 109卷
关键词：
Nd:La0.15Gd0.85 VO4; Microchip laser; Sub-nanosecond pulse; ND-GDVO4; ND-YVO4; GROWTH;
D O I：
10.1016/j.infrared.2020.103408
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
A sub-nanosecond microchip laser was constructed using a Nd:La(0.15)Gd(0.85)VO(4 )with Cr4+:YAG saturable absorber. A single 880 ps pulse was recorded under an incident pump power of 4.91 W, corresponding to a repetition rate of 35 kHz. When the incident pump power exceeded 5 W, the system transferred a single picosecond pulse train into 0.9/1.1 ns two pulse train forms. The average output power increased from 108 mW to 130 mW, corresponding to a peak power decrease from 3.5 kW to similar to 1.8 kW, which might be utilized for laser pulse self-calibrations in time-of-flight distance measurements.
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页数：5
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