An Insulated-Gate Bipolar Transistor With a Collector Trench Electron Extraction Channel

被引：11
|
作者：
Jiang, Mengxuan [1 ]
Yin, Xin [1 ]
Shuai, Zhikang [1 ]
Wang, Jun [1 ]
Shen, Z. John [1 ]
机构：
[1] Hunan Univ, Coll Elect & Informat Engn, Changsha 410082, Hunan, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2015年 / 36卷 / 09期
基金：
国家高技术研究发展计划(863计划); 中国国家自然科学基金;
关键词：
Breakdown voltage; current desity; fall time; IGBT; threshold voltage;
D O I：
10.1109/LED.2015.2462807
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter proposes a novel collector trench insulated-gate bipolar transistor (IGBT) with an electron extraction channel formed on the collector side to enhance the electron extraction effect with a backside lithography process. TCAD simulation indicates that the new IGBT structure offers a turnoff fall time 74% lower than a conventional field-stop IGBT with a similar breakdown voltage, leakage current, threshold voltage, and forward current density, providing a new option for power electronic applications.
引用
收藏
页码：935 / 937
页数：3
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