Control the Composition of Tantalum Oxynitride Films by Sputtering a Tantalum Target in Ar/O2/N2 Radiofrequency Magnetron Plasmas

被引：18
作者：
Bousquet, Angelique [1 ,2 ]
Zoubian, Fadi [1 ]
Cellier, Joel [1 ]
Sauvage, Thierry [3 ]
Tomasella, Eric [1 ]
机构：
[1] Univ Clermont Ferrand, Clermont Univ, Inst Chim Clermont Ferrand, F-63000 Clermont Ferrand, France
[2] CNRS, UMR 6296, ICCF, F-63171 Aubiere, France
[3] UPR CNRS 3079, Lab Condit Extremes & Mat Haute Temp & Irradiat, F-45071 Orleans 2, France
来源：
PLASMA PROCESSES AND POLYMERS | 2013年 / 10卷 / 11期
关键词：
optical emission spectroscopy (OES); optical properties; physical vapor deposition (PVD); Rutherford backscattering spectrometry (RBS); tantalum oxynitride; OPTICAL-EMISSION SPECTROSCOPY; 2 REACTIVE GASES; THIN-FILMS; MECHANICAL-PROPERTIES; OXIDE; DISCHARGES; NITRIDE; OXYGEN; SI; CU;
D O I：
10.1002/ppap.201300036
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Tantalum oxynitride films can be deposited with a high versatility in composition by reactive sputtering of a tantalum target in Ar/O-2/N-2 mixtures. In this paper, plasma analysis was performed from simple to more complex Ar/O-2/N-2 gas mixtures and linked to the layer elemental composition. The presence of two reactive gases accelerates the appearance of Compound Sputtering Mode and modifies the nature of target surface. Hence, in Ar/O-2/N-2, nitrogen addition can lead to poison the target surface by a nitride but also by an oxide or by an oxynitride. Finally, this comprehension of interaction between target and reactive gas was used to select suitable flow rate conditions allowing tantalum oxynitride deposition with varying optical properties.
引用
收藏
页码：990 / 998
页数：9
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