Linear-Mode HgCdTe Avalanche Photodiodes for Photon-Counting Applications

被引：18

作者：

Sullivan, William, III ^{[1
]}

Beck, Jeffrey ^{[1
]}

Scritchfield, Richard ^{[1
]}

Skokan, Mark ^{[1
]}

Mitra, Pradip ^{[1
]}

Sun, Xiaoli ^{[2
]}

Abshire, James ^{[2
]}

Carpenter, Darren ^{[3
]}

Lane, Barry ^{[3
]}

机构：

[1] DRS Technol, Grp C4ISR, Dallas, TX 75243 USA

[2] NASA, Goddard Space Flight Ctr, Greenbelt, MD 20771 USA

[3] A DIC Inc, Longwood, FL 32750 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2015年 / 44卷 / 09期

基金：

英国科研创新办公室;

关键词：

Avalanche photodiode; HgCdTe; single-photon counting; mid-wave infrared; photon detection efficiency; false-event rate;

D O I：

10.1007/s11664-015-3824-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An overview of recent improvements in our understanding of, and the maturity of, linear-mode photon counting with the HgCdTe electron-initiated avalanche photodiode is presented. In 2010 DRS fabricated an experimental 2 x 8 array with (64 mu m)(2) pixels which enabled, for the first time, linear-mode photon counting by use of the MWIR cutoff HgCdTe electron-initiated avalanche photodiode. The device had a high single-photon signal-to-noise ratio of 13.7, an excess noise factor of 1.3-1.4, a 7 ns minimum time between events, and a broad spectral response extending from 0.4 mu m to 4.2 mu m. DRS recently fabricated a new set of devices with improved yield and performance compared with the first device: the false event rate was reduced by a factor of almost 10 to 150 kHz, the photon detection efficiency was increased from 50% to > 60%, and the APD gain was increased by a factor of 4 to over 1900.

引用

收藏

页码：3092 / 3101

页数：10

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