Linear-Mode HgCdTe Avalanche Photodiodes for Photon-Counting Applications

被引:18
|
作者
Sullivan, William, III [1 ]
Beck, Jeffrey [1 ]
Scritchfield, Richard [1 ]
Skokan, Mark [1 ]
Mitra, Pradip [1 ]
Sun, Xiaoli [2 ]
Abshire, James [2 ]
Carpenter, Darren [3 ]
Lane, Barry [3 ]
机构
[1] DRS Technol, Grp C4ISR, Dallas, TX 75243 USA
[2] NASA, Goddard Space Flight Ctr, Greenbelt, MD 20771 USA
[3] A DIC Inc, Longwood, FL 32750 USA
关键词
Avalanche photodiode; HgCdTe; single-photon counting; mid-wave infrared; photon detection efficiency; false-event rate;
D O I
10.1007/s11664-015-3824-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An overview of recent improvements in our understanding of, and the maturity of, linear-mode photon counting with the HgCdTe electron-initiated avalanche photodiode is presented. In 2010 DRS fabricated an experimental 2 x 8 array with (64 mu m)(2) pixels which enabled, for the first time, linear-mode photon counting by use of the MWIR cutoff HgCdTe electron-initiated avalanche photodiode. The device had a high single-photon signal-to-noise ratio of 13.7, an excess noise factor of 1.3-1.4, a 7 ns minimum time between events, and a broad spectral response extending from 0.4 mu m to 4.2 mu m. DRS recently fabricated a new set of devices with improved yield and performance compared with the first device: the false event rate was reduced by a factor of almost 10 to 150 kHz, the photon detection efficiency was increased from 50% to > 60%, and the APD gain was increased by a factor of 4 to over 1900.
引用
收藏
页码:3092 / 3101
页数:10
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