Microreplicated Conditioners for Cu Barrier Chemical-Mechanical Planarization (CMP)

被引：11

作者：

Tseng, Wei-Tsu ^{[1
]}

Rafie, Sana ^{[1
]}

Ticknor, Adam ^{[1
]}

Devarapalli, Vamsi ^{[1
]}

Truong, Connie ^{[1
]}

Majors, Christopher ^{[1
]}

Zabasajja, John ^{[2
]}

Sokol, Jennifer ^{[2
]}

Laraia, Vince ^{[2
]}

Fritz, Matt ^{[2
]}

机构：

[1] IBM Semicond Res & Dev Ctr, Hopewell Jct, NY 12533 USA

[2] 3M Elect Mat Solut Div, St Paul, MN 55144 USA

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2015年 / 4卷 / 11期

关键词：

PAD;

D O I：

10.1149/2.0011511jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Removal rates of low-k SiCOH dielectric and scratch defect density of Cu barrier CMP on a soft polyurethane pad with conditioning are characterized and compared between conventional diamond tip conditioner and two types of microreplicated diamond-coated conditioners. Data collected from high volume manufacturing environment demonstrate stable and uniform SiCOH removal rates plus lower scratch density with up to 1000 wafer passes on the soft pad with the microreplicated conditioners, relative to the conventional diamond tip conditioner. Scratch defects are categorized based upon their length and severity. The formation mechanism for each type of scratches are hypothesized. Groove depth and asperity height of soft pads are analyzed in order elucidate the observed differences in removal rates and scratch density with various different pad conditioners. (C) 2015 The Electrochemical Society. All rights reserved.

引用

页码：P5001 / P5007

页数：7

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