Luminescent properties of ZnxSr1-xS:Ce thin film phosphors for electroluminescent devices

被引:3
作者
Lee, ST [1 ]
Kitagawa, M [1 ]
Ichino, K [1 ]
Kobayashi, H [1 ]
机构
[1] KOREA MARITIME UNIV,DIV SHIP OPERATING SYST ENGN,PUSAN 606791,SOUTH KOREA
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 3B期
关键词
ZnxSr(1-x)S:Ce thin films; photoluminescence; crystallinity; binding energy; valence states; host crystal;
D O I
10.1143/JJAP.36.1736
中图分类号
O59 [应用物理学];
学科分类号
摘要
The dependence of the luminescent properties of Ce-doped ZnxSr1-xS thin films on composition and annealing temperature is investigated. It has been found that the emission intensity of Ce3+ photoluminescence is enhanced by the incorporation of an optimum amount of Zn and by the increase of the post-annealing temperature. The luminescent intensity depends strongly on the crystallinity of the films and on the valence state of Ce ions. Fabrication of electroluminescent devices introducing ZnxSr1-xS as a host material has been attempted.
引用
收藏
页码:1736 / 1740
页数:5
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