Porous Silicon Gas Sensors: The Role of the Layer Thickness and the Silicon Conductivity

被引：12

作者：

Ramirez-Gonzalez, Francisco ^{[1
]}

Garcia-Salgado, Godofredo ^{[1
]}

Rosendo, Enrique ^{[1
]}

Diaz, Tomas ^{[1
]}

Nieto-Caballero, Fabiola ^{[2
]}

Coyopol, Antonio ^{[1
]}

Romano, Roman ^{[1
]}

Luna, Alberto ^{[1
]}

Monfil, Karim ^{[1
]}

Gastellou, Erick ^{[3
]}

机构：

[1] Benemerita Univ Autonoma Puebla, Ctr Invest Disposit Semicond, 14 Sur & Av San Claudio, Puebla 72570, Mexico

[2] Benemerita Univ Autonoma Puebla, Fac Ciencias Quim, 14 Sur & Av San Claudio, Puebla 72570, Mexico

[3] Univ Tecnol Puebla, Div Tecnol Informac & Comunicac, Antiguo Camino Resurrecc 1002-A, Puebla 72300, Mexico

来源：

SENSORS | 2020年 / 20卷 / 17期

关键词：

porous silicon sensor; sensor conductivity type; porous silicon layer thickness; resistive sensor;

D O I：

10.3390/s20174942

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

We studied the influences of the thickness of the porous silicon layer and the conductivity type on the porous silicon sensors response when exposed to ethanol vapor. The response was determined at room temperature (27 degrees C) in darkness using a horizontal aluminum electrode pattern. The results indicated that the intensity of the response can be directly or inversely proportional to the thickness of the porous layer depending on the conductivity type of the semiconductor material. The response of the porous sensors was similar to the metal oxide sensors. The results can be used to appropriately select the conductivity of semiconductor materials and the thickness of the porous layer for the target gas.

引用

页码：1 / 10

页数：10

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